Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes
Source abstract
Abstract
Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2:1, 1:1, and 1:2) was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms were investigated using current–voltage (I–V) and capacitance–voltage (C–V) measurements. Under low reverse bias condition, the sample with the pulse ratio of 2:1 was explained by Poole–Frenkel emission and the negative temperature dependence for the sample with the pulse ratio of 1:2 was associated with the acceptor levels in the AlGaN layer. Fast interface traps at 0.24–0.29 eV were observed for the samples with the pulse ratios of 1:1 and 1:2, whereas bulk traps at ~0.34 eV were observed for the sample with the pulse ratio of 2:1. Higher trap densities were obtained from the C–V hysteresis measurements when the pulse ratios were 1:1 and 1:2, indicating the presence of a charge trapping interfacial layer. According to the X-ray photoelectron spectroscopy spectra, the pulse ratio of 2:1 was found to have less oxygen-related defects in the AlGaN layer.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Visual Optics, Seoul National University of Science and Technology (Seoultech), Seoul 01811, Korea
Department of Materials Science and Engineering, Seoul National University of Science and Technology (Seoultech), Seoul 01811, Korea
Funding
National Research Foundation of Korea
References (55)
Show source-provided references
1. Undoped AlGaN/GaN HEMTs for microwave power amplification10.1109/16.906439 ↗
2. A physical-based analytical model for 2DEG charge density in AlGaN/GaN HEMT devices10.1109/TED.2011.2161314 ↗
3. High temperature performance of AlGaN/GaN HEMTs on Si substrates10.1016/j.sse.2006.02.008 ↗
4. AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD10.1016/j.jcrysgro.2006.10.219 ↗
5. AlGaN/GaN MIS-HFETs with fT of 163 GHz using cat-CVD SiN gate-insulating and passivation layers
6. On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate10.1063/1.4798257 ↗
7. Effect of barrier layer thickness on gate leakage current in AlGaN/GaN HEMTs10.1109/TED.2015.2469151 ↗
8. Modeling of forward gate leakage current in MOSHEMT using trap-assisted tunneling and Poole-Frenkel emission10.1109/TED.2016.2555851 ↗
9. Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures10.1063/1.4761961 ↗
10. Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors10.1063/1.4871802 ↗
11. Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N2 plasma surface treatment10.1016/j.sse.2018.03.003 ↗
12. Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system10.1063/1.125686 ↗
13. Atomic layer deposition of GaN at low temperatures10.1116/1.3664102 ↗
14. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition10.1088/0957-4484/26/1/014002 ↗
15. Improved interfacial properties of thermal atomic layer deposited AlN on GaN10.1016/j.vacuum.2018.10.067 ↗
16. Crystalline growth of AlN thin films by atomic layer deposition10.1088/1742-6596/757/1/012003 ↗
17. Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma10.1116/1.5003381 ↗
18. Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1−xN thin films at low temperatures
19. Atomic layer deposition of AlGaN on GaN and current transport mechanism in AlGaN/GaN Schottky diodes10.2320/matertrans.MT-M2019232 ↗
20. Recent advances in Schottky barrier concepts10.1016/S0927-796X(01)00037-7 ↗
21. Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy10.1063/1.2159547 ↗
22. Electrical properties of planar AlGaN/GaN Schottky diodes: Role of 2DEG and analysis of non-idealities10.1063/1.4979530 ↗
23. Impact of Ga/N flux ratio on trap states in n-GaN n-GaN grown by plasma-assisted molecular-beam epitaxy10.1063/1.1445274 ↗
24. Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes10.1063/1.3151952 ↗
25. Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor10.1063/1.3573794 ↗
26. Reverse Schottky gate current in AlGaN-GaN high-electron-mobility-transistors10.1063/1.4764866 ↗
27. Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate10.7567/APEX.9.031001 ↗
28. Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode10.1063/1.3600229 ↗
29. Thermoluminescence kinetics of oxygen-related centers in AlN single crystals10.1016/j.diamond.2012.02.004 ↗
30. Theoretical investigation of native defects, impurities, and complexes in aluminum nitride10.1103/PhysRevB.65.155212 ↗
31. Point-defect energies in the nitrides of aluminum, gallium, and indium10.1103/PhysRevB.45.10942 ↗
32. Thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaN∕GaN high electron mobility transistors10.1063/1.2191620 ↗
33. Trap-assisted tunneling current of ultrathin InAlN/GaN HEMTs on Si (1 1 1) substrate10.1016/j.sse.2019.107622 ↗
34. Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors10.1063/1.1571655 ↗
35. Suemitsu, T., Tomizawa, M., Enoki, T., and Ishii, Y. (1998). Enhancement of weak impact ionization in InAlAs/InGaAs HEMTs induced by surface traps: Simulation and experiments, IWCE-6, Computational Electronics. Extended Abstracts of 1998 Sixth International Workshop, IEEE.
36. Studies on the influences of i-GaN, n-GaN, p-GaN and InGaN cap layers in AlGaN/GaN high-electron-mobility transistors10.1143/JJAP.44.2953 ↗
37. Ohmic contact to high-aluminum-content AlGaN epilayers10.1007/s11664-009-0924-y ↗
38. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures10.1063/1.369664 ↗
39. Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section10.1063/1.4793196 ↗
40. Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique10.1063/1.4813912 ↗
41. Trapping properties of LiNbO3/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure characterized by temperature dependent conductance measurements10.1063/1.3374689 ↗
42. Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis10.1063/1.3148830 ↗
43. An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors10.1063/1.4824066 ↗
44. Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors10.1063/1.5010952 ↗
45. AlN passivation effect on Au/GaN Schottky contacts10.1016/j.tsf.2018.12.008 ↗
46. A crystalline oxide passivation for Al2O3/AlGaN/GaN10.1063/1.4897641 ↗
47. Thickness dependence on interfacial and electrical properties in atomic layer deposited AlN on c-plane GaN10.1186/s11671-018-2645-8 ↗
48. Properties of AlN grown by plasma enhanced atomic layer deposition10.1016/j.apsusc.2011.04.037 ↗
49. Mechanisms for reactions of trimethylaluminum with molecular oxygen and water10.1016/j.comptc.2014.02.015 ↗
50. Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition10.1016/j.tsf.2003.10.004 ↗
51. Improved data retention of InSnZnO nonvolatile memory by H2O2 treated Al2O3 tunneling layer: A cost-effective method10.1109/LED.2016.2599559 ↗
52. Hydrogen-induced change in the electrical properties of metal-insulator-semiconductor Pt–GaN diodes10.1063/1.3496625 ↗
53. Anomalous capacitance-voltage characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen10.1002/pssc.200983411 ↗
54. Effect of hydrogen on defects of AlGaN/GaN HEMTs characterized by low-frequency noise10.1109/TED.2018.2803443 ↗
55. Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors10.1116/1.1589520 ↗