Structure of Highly Porous Silicon Dioxide Thin Film: Results of Atomistic Simulation
Source abstract
Abstract
The high-energy glancing angle deposition of silicon dioxide films with alternation of deposition angle is studied using classical atomistic simulation. Both slow and fast alternations are investigated. The growth of vertical tree-like columns and chevron-like regular structures is demonstrated under fast and slow alternations, respectively. Due to high porosity, the density of the deposited silicon dioxide films is reduced to 1.3 ÷ 1.4 g/cm3. This results in reduction of the refractive index to 1.3, which agrees with known experimental data. For slow continuous substrate rotation, formation of a helical structure is demonstrated.
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Research context
OpenAlex topics: Optical Coatings and Gratings · Photonic Crystals and Applications · Thin-Film Transistor Technologies
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Affiliations
Research Computing Center, M. V. Lomonosov Moscow State University, 119991 Moscow, Russia
Funding
Russian Science Foundation
References (29)
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