Study on β-Ga2O3 Films Grown with Various VI/III Ratios by MOCVD
Source abstract
Abstract
β-Ga2O3 films were grown on sapphire (0001) substrates with various O/Ga (VI/III) ratios by metal organic chemical vapor deposition. The effects of VI/III ratio on growth rate, structural, morphological, and Raman properties of the films were systematically studied. By varying the VI/III ratio, the crystalline quality obviously changed. By decreasing the VI/III ratio from 66.9 × 103 to 11.2 × 103, the crystalline quality improved gradually, which was attributed to low nuclei density in the initial stage. However, crystalline quality degraded with further decrease of the VI/III ratio, which was attributed to excessive nucleation rate.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Funding
National Natural Science Foundation of China · Science and Technology Developing Project of Jilin Province · National Key Research and Development Program · Program for New Century Excellent Talents in University
References (27)
Show source-provided references
1. Recent progress in Ga2O3 power devices10.1088/0268-1242/31/3/034001 ↗
2. Effect of annealing on β-Ga2O3 film grown by pulsed laser deposition technique10.1016/j.jallcom.2013.08.115 ↗
3. Heteroepitaxial growth of multidomain Ga2O3/sapphire (001) thin films deposited using radio frequency magnetron sputtering10.1016/j.matlet.2014.01.030 ↗
4. Epitaxial growth of (-201) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy10.1016/j.mssp.2016.02.008 ↗
5. β-Ga2O3 thin films on sapphire pre-seeded by homo-self-templated buffer layer for solar-blind UV photodetector10.1016/j.optmat.2015.11.023 ↗
6. A comparative study of β-Ga2O3 nanowires grown on different substrates using CVD technique10.1016/j.jallcom.2013.10.165 ↗
7. MBE grown β-Ga2O3 and its power device applications10.1016/j.jcrysgro.2013.02.015 ↗
8. Characterization of homoepitaxial β-Ga2O3 films prepared by metal–organic chemical vapor deposition10.1016/j.jcrysgro.2014.07.011 ↗
9. Growth and morphology control of β-Ga2O3 nanostructures by atmospheric-pressure CVD10.1016/j.tsf.2016.07.074 ↗
10. β-Ga2O3 thin films for high-temperature gas sensors10.1016/S0169-4332(98)00714-4 ↗
11. Oxidation of gallium nitride epilayers in dry oxygen
12. Chemical reaction engineering in the design of CVD reactors10.1016/S0009-2509(98)00443-6 ↗
13. An overview of gallium nitride growth chemistry and its effect on reactor design: Application to a planetary radial-flow CVD system10.1016/j.jcrysgro.2005.09.050 ↗
14. Development of atmospheric pressure CVD processes for high quality transparent conductive oxides10.1016/j.egypro.2010.07.008 ↗
15. Large-area MOCVD growth of Ga2O3 in a rotating disc reactor10.1007/s11664-014-3566-7 ↗
16. Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique10.1016/j.vacuum.2012.04.019 ↗
17. β-Ga2O3 versus ε-Ga2O3: Control of the crystal phase composition of gallium oxide thin film prepared by metal-organic chemical vapor deposition10.1016/j.apsusc.2017.05.241 ↗
18. Fast growth rate of epitaxial β-Ga2O3 by close coupled showerhead MOCVD10.1016/j.jcrysgro.2017.06.001 ↗
19. Effect of post-deposition annealing on low temperature metalorganic chemical vapor deposited gallium oxide related materials10.1016/j.jcrysgro.2016.11.005 ↗
20. Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (100) substrates by MOCVD method10.1016/j.apsusc.2014.11.074 ↗
21. Stringfellow, G.B. (1999). Organometallic Vapor-Phase Epitaxy: Theory and Practice, Academic Press. [2nd ed.].
22. Lu, D., and Duan, S. (2009). Metalorganic Vapor Phase Epitaxy Foundation and Application, Science Press. [1st ed.].
23. Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE10.1016/S0022-0248(97)00875-0 ↗
24. Control of initial nucleation by reducing the V/III ratio during the early stages of GaN growth10.1002/1521-396X(200007)180:1<45::AID-PSSA45>3.0.CO;2-5 ↗
25. Study of iron-catalysed growth of β-Ga2O3 nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques10.1088/0022-3727/47/43/435101 ↗
26. Blue shifted Raman scattering and its correlation with the [110] growth direction in gallium oxide nanowires10.1063/1.2128044 ↗
27. Synthesis, Raman scattering and defects of β-Ga2O3 nanorods10.1063/1.1507835 ↗