Growth of NbC Thin Film Using CH4 as a Carbon Source and Reducing Agent
Source abstract
Abstract
Transition metal carbides (TMCs) have high melting points, hardness, and chemical stabilities in acidic media. In this work, a chemical vapor deposition method using CH4 as a carbon source and reducing agent was employed to make an NbC film. NbCl5 carried by Ar gas was used as an Nb precursor. An NbC thin film, deposited on a c-plane sapphire, exhibited a preferential orientation of the (111) plane, which can be explained by domain-matching epitaxy. A nanoindentation test showed that the NbC film with the preferential orientation of the (111) plane was stronger than that with a random orientation. Moreover, the results showed that H2, which is conventionally used as a reducing agent in NbC synthesis, degraded the crystallinity and hardness of the fabricated NbC.
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Research context
OpenAlex topics: Metal and Thin Film Mechanics · Diamond and Carbon-based Materials Research · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 16419, Korea
Department of Materials Science and Engineering, Ajou University, Suwon 16499, Korea
Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
Funding
the Basic Science Research Program through the National Research Foundation of Korea (NRF)
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