Growth of WS2 flakes on Ti3C2Tx Mxene Using Vapor Transportation Routine
Source abstract
Abstract
Two-dimensional dichalcogenides (TMDs) and mxene junctions had been predicted to possess distinct tunable electronic properties. However, direct synthesis of WS2 on Ti3C2Tx mxene is still challenging. Herein, we successfully deposited WS2 onto the surface of Ti3C2Tx mxene by employing the vapor transportation (VT) routine. By modulating pressure and source-sample distance, multilayer and monolayer (1 L) WS2 flakes were deposited onto the lateral side and top surface of Ti3C2Tx flakes. The 1 L WS2 flakes growing on lateral side of Ti3C2Tx flake have much higher photoluminescence (PL) intensity than 1 L flakes growing on the top surface. Our study has the potential to benefit the design and preparation of novel electronic and electrochemical devices based on TMDs/mxene junctions.
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Research context
OpenAlex topics: MXene and MAX Phase Materials · 2D Materials and Applications · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Department of Chemistry, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China
Funding
Natural Science Foundation of Zhejiang Province
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