journal article·2023-06-05Open access

1,4-Bis(trimethylsilyl)piperazine—Thermal Properties and Application as CVD Precursor

Evgeniya Ermakova, Sergey Sysoev, Irina Tsyrendorzhieva, Alexander Mareev, Olga Maslova, Vladimir Shayapov, Eugene Maksimovskiy, Irina Yushina, Marina Kosinova

Coatings· Volume 13· Issue 6

Abstract

We report an investigation into 1,4-Bis-N,N-(trimethylsilyl)piperazine (BTMSP) as a novel precursor for the synthesis of silicon carbonitride films by chemical vapor deposition (CVD). The thermal stability, temperature dependence of vapor pressure and thermodynamic constants of the evaporation process of BTMSP were determined by static tensimetry with a glass membrane zero manometer. The transformation of the compound in low-power (25 W) plasma conditions was investigated by optical emission spectroscopy. It was shown that BTMSP undergoes destruction, accompanied by H and CH elimination and CN formation. SiCN(H) films were deposited in a hot-wall plasma-enhanced CVD reactor. The optical properties of the films were studied by spectral ellipsometry (refractive index: 1.5–2.2; absorption coefficient: 0–0.12) and UV–Vis spectroscopy (transmittance: up to 95%; optical bandgap: 1.6–4.9 eV). Information on the aging behavior of the films is also provided. The transformation of the films occurred through water adsorption and the formation of Si–O bonds with the degradation of Si–H, N–H and Si–CHx–Si bonds.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Diamond and Carbon-based Materials Research · Semiconductor materials and devices · Copper Interconnects and Reliability

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Laboratory of Functional Films and Coatings, Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk 630090, Russia

Laboratory of Thermodynamics of Inorganic Materials, Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk 630090, Russia

Laboratory of Medical and Pharmaceutical Chemistry, A.E. Favorsky Irkutsk Institute of Chemistry, SB RAS, Irkutsk 664033, Russia

Funding

Russian Science Foundation

References (78)

Show source-provided references
1. Carbon-rich amorphous silicon carbide and silicon carbonitride films for silicon-based photoelectric devices and optical elements: Application from UV to mid-IR spectral range10.1016/j.optmat.2020.109959 ↗
2. X-ray Absorption Spectroscopy of Silicon Carbide Thin Films Improved by Nitrogen for All-Silicon Solar Cells10.1149/2162-8777/abb2b1 ↗
3. Annealing of silicon carbonitride nanostructured thin films: Interdependency of hydrogen content, optical, and structural properties10.1007/s10853-017-1576-6 ↗
4. A low cost n-SiCN/p-PS/p-Si heterojunction for high temperature ultraviolet detecting applications10.1016/j.sna.2018.06.050 ↗
5. Hydrogenated Silicon Carbonitride Thin Film Nanostructuring Using SF6 Plasma: Structural and Optical Analysis10.1007/s12633-020-00392-7 ↗
6. Study on photoelectricity properties of SiCN thin films prepared by magnetron sputtering10.1016/j.jmrt.2021.08.043 ↗
7. Effect of sputtering power on piezoresistivity and interfacial strength of SiCN thin films prepared by magnetic sputtering10.1016/j.ceramint.2021.09.299 ↗
8. Mechanical properties of amorphous SiCN films deposited by ion-beam-assisted deposition10.1016/j.diamond.2021.108732 ↗
9. Preparation and optical properties of SiCN thin films deposited by reactive magnetron sputtering
10. Dependence of optical properties on composition of silicon carbonitride thin films deposited at low temperature by PECVD10.1016/j.jnoncrysol.2020.120434 ↗
11. Annealing effects on a-SiC:H and a-SiCN:H films deposited by plasma CVD methods10.1016/j.vacuum.2020.109410 ↗
12. Comparison of SiCxNy barriers using different deposition precursors capped on porous low-dielectric-constant SiOCH dielectric film10.1016/j.tsf.2020.137983 ↗
13. SiCN:H thin films deposited by MW-PECVD with liquid organosilicon precursor: Gas ratio influence versus properties of the deposits10.1002/ppap.201900138 ↗
14. Organosilicon compounds as single-source precursors for SiCN films production10.1016/j.jorganchem.2021.122183 ↗
15. Hard silicon carbonitride thin-film coatings produced by remote hydrogen plasma chemical vapor deposition using aminosilane and silazane precursors. 1: Deposition mechanism, chemical structure, and surface morphology10.1002/ppap.202000240 ↗
16. Hard silicon carbonitride thin-film coatings by remote hydrogen plasma chemical vapor deposition using aminosilane and silazane precursors. 2: Physical, optical, and mechanical properties of deposited films10.1002/ppap.202000241 ↗
17. Reactivity of organosilicon precursors in remote hydrogen microwave plasma chemical vapor deposition of silicon carbide and silicon carbonitride thin-film coatings10.1002/aoc.1589 ↗
18. Synthesis of two aminosilanes as CVD precursors of SiCxNy films: Tuning film composition by Molecular Structures10.1080/10426507.2018.1455682 ↗
19. Optical properties of plasma-enhanced chemical vapor deposited SiCxNy films by using silazane precursors10.1016/j.tsf.2017.07.016 ↗
20. Optical Properties of Silicon Carbonitride Films Produced by Plasma-Induced Decomposition of Organic Silicon Compounds10.1134/S0018143915040074 ↗
21. Systematic investigation of silylation materials for recovery use of low-k material plasma damage10.7567/JJAP.54.071502 ↗
22. PECVD of Low Carbon Content Silicon Nitride-Like Thin Films with Dimethylaminosilanes10.1002/ppap.200730203 ↗
23. Methylaminosilane fed Inductively Coupled Plasmas for Silicon Nitride Deposition10.1002/ppap.200800060 ↗
24. Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H2/N2/Ar/Hexamethyldisilazane Gas Mixture10.1002/ppap.201300166 ↗
25. Chagin, M.N., Sulyaeva, V.S., Shayapov, V.R., Kolodin, A.N., Khomyakov, M.N., Yushina, I.V., and Kosinova, M.L. (2022). Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane. Coatings, 12.10.3390/coatings12010080 ↗
26. Remote hydrogen–nitrogen plasma chemical vapor deposition from a tetramethyldisilazane source. Part 1. Mechanism of the process, structure and surface morphology of deposited amorphous hydrogenated silicon carbonitride films10.1039/b211415c ↗
27. Wide variations of SiCxNy:H thin films optical constants deposited by H2/N2/Ar/hexamethyldisilazane microwave plasma10.1016/j.surfcoat.2012.07.079 ↗
28. Thin Film Deposition in Capacitively Coupled Plasmas Fed with Bis(dimethylamino)-dimethylsilane and Oxygen: An FTIR study10.1002/ppap.200800206 ↗
29. Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes10.1016/j.tca.2015.02.004 ↗
30. Molecular complexes formed by halides of group 4,5,13–15 elements and the thermodynamic characteristics of their vaporization and dissociation found by the static tensimetric method10.1016/j.ccr.2010.04.001 ↗
31. Kuznetsov, F.A., Titov, V.A., Titov, A.A., and Chernyavskii, L.I. (1995, January 24–30). Data bank of properties of microelectronic materials. Proceedings of the International Symposium on Advanced Materials, Tsukuba, Japan.
32. Kramida, A., Ralchenko, Y., Reader, J., and NIST ASD Team (2022, October 15). NIST Atomic Spectra Database (ver. 5.10); National Institute of Standards and Technology, Gaithersburg, MD, USA, Available online: https://physics.nist.gov/asd.
33. Online diagnosis of electron excitation temperature in CH4+H2 discharge plasma at atmospheric pressure by optical emission spectra10.1007/s11433-008-0175-6 ↗
34. Optical Properties and Electronic Structure of Amorphous Germanium10.1002/pssb.19660150224 ↗
35. N-substituted hexamethyldisilazanes as new substances for the synthesis of functional films in the system Si-Ge-C-N-H10.1134/S1070363211120140 ↗
36. Basics of plasma spectroscopy10.1088/0963-0252/15/4/S01 ↗
37. An effect of hydrogenation on the photoemission of amorphous SiCN films10.1016/j.ijhydene.2021.01.090 ↗
38. Silicon carbon nitride films as passivation and antireflective coatings for silicon solar cells10.1016/j.surfcoat.2014.01.037 ↗
39. Nitrogen ion beam thinning of a-SiCN diaphragm for environmental cell prepared by low-energy ion beam enhanced chemical vapor deposition10.1016/j.vacuum.2020.109770 ↗
40. a-SiC:H Films by Remote Hydrogen Microwave Plasma CVD From Ethylsilane Precursors10.1002/cvde.201207046 ↗
41. Blue-violet emission of silicon carbonitride thin films prepared by sputtering and annealing treatment10.1016/j.apsusc.2021.149121 ↗
42. Silicon Oxycarbide Thin Films by Remote Microwave Hydrogen Plasma CVD Using a Tetramethyldisiloxane Precursor10.1002/cvde.201504330 ↗
43. Mechanical behavior related to various bonding states in amorphous Si–C–N hard films10.1016/j.surfcoat.2014.09.002 ↗
44. Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon10.1103/PhysRevB.45.13367 ↗
45. Structural, optoelectronic and mechanical properties of PECVD Si-C-N films: An effect of substrate bias10.1016/j.mssp.2018.07.023 ↗
46. Composite materials based on polymer-derived SiCN ceramic and disordered hard carbons as anodes for lithium-ion batteries10.1016/j.jpowsour.2013.03.137 ↗
47. Raman Spectra of Carbon-Based Materials (from Graphite to Carbon Black) and of Some Silicone Composites10.3390/c1010077 ↗
48. Aging process in plasma-polymerized organosilicon thin films10.1080/00222338508063316 ↗
49. Plasma-enhanced chemical vapor deposition of amorphous silicon carbonitride: Deposition temperature dependence of bonding structure, refractive index, mechanical stress and their aging under ambient air10.1016/j.tsf.2017.05.004 ↗
50. The influence of NH3 flow rate on the microstructure and oxidation properties of a-Si-C-N:H films prepared by PECVD technology10.1016/j.apsusc.2020.145861 ↗
51. Aging- and thermal-annealing effects on the vibrational- and microstructural-properties of PECVD grown hydrogenated amorphous silicon carbon nitride thin films10.1016/j.vibspec.2017.11.002 ↗
52. A covalent micro/nano-composite resistant to high-temperature oxidation10.1038/374526a0 ↗
53. Recent approaches to reduce aging phenomena in oxygen- and nitrogen-containing plasma polymer films: An overview10.1016/j.cossms.2018.01.001 ↗
54. Plasma methods for the generation of chemically reactive surfaces for biomolecule immobilization and cell colonization—A review10.1002/ppap.200600021 ↗
55. Quantitative analysis of polymer surface restructuring10.1021/la00007a042 ↗
56. Biederman, H. (2004). Plasma Polymer Films, Imperial College Press.10.1142/p336 ↗
57. Non-destructive sub-surface chemical characterization of airexposed plasma polymers by energy-resolved XPS10.1002/ppap.200900130 ↗
58. Atmospheric Pressure Plasma CVD of Amorphous Hydrogenated Silicon Carbonitride (a-SiCN:H) Films Using Triethylsilane and Nitrogen10.1002/ppap.201100035 ↗
59. Lorentz-Lorenz correlation for reactively plasma deposited Si-N films10.1063/1.90006 ↗
60. Mechanical and optical properties of hard SiCN coatings prepared by PECVD10.1016/S0040-6090(03)01057-5 ↗
61. Chemical structure and optical properties of a-SiNC coatings synthesized from different disilazane precursors with the RF plasma enhanced CVD technique—A comparative study
62. Atmospheric pressure plasma-enhanced chemical vapor deposition of a-SiCN:H films: Role of precursors on the film growth and properties10.1021/am301157p ↗
63. Ermakova, E., Mogilnikov, K., Asanov, I., Fedorenko, A., Yushina, I., Kichay, V., Maksimovskiy, E., and Kosinova, M. (2022). Chemical Structure, Optical and Dielectric Properties of PECVD SiCN Films Obtained from Novel Precursor. Coatings, 12.10.3390/coatings12111767 ↗
64. Ermakova, E., Kolodin, A., Fedorenko, A., Yushina, I., Shayapov, V., Maksimovskiy, E., and Kosinova, M. (2023). Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture. Coatings, 13.10.3390/coatings13020310 ↗
65. Embedded carbon bridges in low-k PECVD silicon carbonitride films using silazane precursors10.7567/1347-4065/ab1fd5 ↗
66. Process-dependent mechanical and optical properties of nanostructured silicon carbonitride thin films10.1088/1361-6528/ab180c ↗
67. The affinity of Si–N and Si–C bonding in amorphous silicon carbon nitride (a-SiCN) thin film10.1016/j.diamond.2004.10.045 ↗
68. Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target10.1016/S0169-4332(01)00010-1 ↗
69. Effects of hydrogen contamination on the localized states in amorphous silicon10.1063/1.88570 ↗
70. Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films10.1149/2.0151802jss ↗
71. Near-field scanning microscopy and physico-chemical analysis versus time of SiCN:H thin films grown in Ar/NH3/TMS gas mixture using MW-Plasma CVD at 400 °C10.1002/ppap.201800066 ↗
72. Structural and electronic properties of wide band gap silicon carbon nitride materials—A first-principles study10.1016/j.diamond.2003.11.084 ↗
73. Electronic structure, charge distribution, and charge transfer in α- and β-Si3N4 and at the Si(111)/Si3N4 interface10.1103/PhysRevB.58.1887 ↗
74. Innovative all-silicon based a-SiNx:O/c-Si heterostructure solar-blind photodetector with both high responsivity and fast response speed10.1063/5.0071602 ↗
75. Investigation of charge storage and retention characteristics of silicon nitride in NVM based on InGaZnO channels for system-on-panel applications10.1016/j.mee.2012.05.058 ↗
76. Thin silicon carbonitride films are perspective low-k materials10.1016/j.jpcs.2007.07.061 ↗
77. Effect of annealing on structural and optical properties of diamond-like nanocomposite thin films10.1007/s00339-013-8044-1 ↗
78. Optical and electrical characterization of carbon nanoparticles produced in laminar premixed flames10.1016/j.combustflame.2014.05.021 ↗