PECVD Synthesis and Thermoelectric Properties of Thin Films of Lead Chalcogenides (PbTe)1−x(PbS)x
Source abstract
Abstract
Lead-based ternary-chalcogenide thin films of the (PbTe)1−x(PbS)x system were obtained using the plasma-enhanced chemical-vapor-deposition (PECVD) technique under conditions of a nonequilibrium low-temperature argon plasma of an RF discharge (40.68 MHz) at a reduced pressure (0.01 Torr). High-purity elements were directly used as starting materials, namely Pb, S and Te. Plasma–chemical synthesis was carried out on the surface of c-sapphire and silicon substrate. The physicochemical properties of the films were studied using various analytical methods. The dependence of the Seebeck coefficient, resistivity and power factor on the structural properties and composition has been studied. The thermoelectric characteristics were found to be dependent on film composition. Upon the selection of optimal sulfur concentration, one can increase the power factor compared to single-phase PbS or PbTe films.
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Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Physical Faculty, Lobachevsky State University, 603022 Nizhny Novgorod, Russia
Chemical Faculty, Nizhny Novgorod State Technical University, R.E. Alekseeva, 603950 Nizhny Novgorod, Russia
Funding
Ministry of Science and Higher Education of the Russian Federation
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