Study the Passivation Characteristics of Microwave Annealing Applied to APALD Deposited Al2O3 Thin Film
Source abstract
Abstract
In this study, a self-developed atmospheric pressure atomic layer deposition (APALD) system is used to deposit Al2O3 passivation film, along with the use of precursor combinations of Al(CH3)3/H2O to improve its passivation characteristics through a short-time microwave post-annealing process. Comparing the unannealed and microwave-annealed samples whose temperature is controlled at 200–500 °C, APALD non-vacuum deposited film can be realized with a higher film deposition rate, which is beneficial for increasing the production throughput while at the same time reducing the operating cost of vacuum equipment at hand. Since the microwave has a greater penetration depth during the process, the resultant thermal energy provided can be spread out evenly to the entire wafer, thereby achieving the effect of rapid annealing. The film thickness is subsequently analyzed by TEM, whereas the chemical composition is verified by EDS and XPS. The negative fixed charge and interface trap density are analyzed by the C-V measurement method. Finally, the three major indicators of τeff, SRV, and IVoc are analyzed by QSSPC to duly verify the excellent passivation performance.
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Research context
OpenAlex topics: Semiconductor materials and devices · Silicon and Solar Cell Technologies · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
Department of Mechanical Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan
References (44)
Show source-provided references
1. Development of the PERC Solar Cell10.1109/JPHOTOV.2019.2899460 ↗
2. Ruthenium-based DSSC efficiency optimization by grapheme quantum dot doping
3. Parameter extraction of an organic solar cell using asymptotic estimation and Lambert W function10.1117/12.2253968 ↗
4. 21.2%-efficient fineline-printed PERC solar cell with 5 busbar front grid10.1002/pssr.201409190 ↗
5. Ye, F., Deng, W., Guo, W., Liu, R., Chen, D., Chen, Y., Yang, Y., Yuan, N., Ding, J., and Feng, Z. (2016, January 5–10). 22.13% Efficient Industrial p-Type Mono PERC Solar Cell. Proceedings of the IEEE 43rd Photovoltaic Specialists Conference, Portland, OR, USA.10.1109/PVSC.2016.7750289 ↗
6. Annealing of Al2O3 thin films prepared by atomic layer deposition10.1088/0022-3727/40/12/025 ↗
7. Chemical and structural study of electrically passivating Al2O3/Si interfaces prepared by atomic layer deposition
8. Modulation of atomic-layer-deposited Al2O3 film passivation of silicon surface by rapid thermal processing10.1063/1.3616145 ↗
9. Variation of the layer thickness to study the electrical property of PECVD Al2O3 / c-Si interface10.1016/j.egypro.2011.06.195 ↗
10. High-temperature stability of c-Si surface passivation by thick PECVD Al2O3 with and without hydrogenated capping layers10.1016/j.apsusc.2012.03.171 ↗
11. Advances in the Surface Passivation of Silicon Solar Cells10.1016/j.egypro.2012.02.004 ↗
12. Properties of rfsputtered Al2O3 films deposited by planar magnetron10.1116/1.569103 ↗
13. Thermal stability of sputtered Al2O3 coatings10.1016/j.surfcoat.2009.10.002 ↗
14. Optical properties of amorphous Al2O3 thin films prepared by a sol-gel process10.1016/j.ceramint.2014.05.148 ↗
15. Properties of aluminum oxide thin films deposited by pulsed laser deposition and plasma enhanced chemical vapor deposition10.1016/j.tsf.2007.05.064 ↗
16. Influence of Al2O3 Dielectrics on the Trap-Depth Profiles in MOS Devices Investigated by the Charge-Pumping Method10.1109/TED.2004.839878 ↗
17. Microwave plasma-assisted ALD of Al2O3 thin films: A study on the substrate temperature dependence of various parameters of interest10.1007/s00339-017-0830-8 ↗
18. Huang, Y.-C., and Chuang, R.W. (2021). Study on Annealing Process of Aluminum Oxide Passivation Layer for PERC Solar Cells. Coatings, 11.10.3390/coatings11091052 ↗
19. Atmospheric pressure atomic layer deposition of iron oxide nanolayer on the Al2O3/SiO2/Si substrate for mmtall vertically aligned CNTs growth10.1007/s10853-020-04922-x ↗
20. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices10.1063/1.4916525 ↗
21. Oxide Electronics by Spatial Atomic Layer10.1109/JDT.2009.2022770 ↗
22. Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition10.1063/1.5113671 ↗
23. Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing10.1186/s11671-019-2874-5 ↗
24. A review on the susceptor assisted microwave processing of materials10.1016/j.energy.2015.11.034 ↗
25. Efficiency improvement of PERC solar cell using an aluminum oxide passivation layer prepared via spatial atomic layer deposition and post annealing10.1016/j.surfcoat.2018.12.016 ↗
26. Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing10.1109/LED.2010.2090937 ↗
27. Low-temperature soluble InZnO thin film transistors by microwave annealing10.1016/j.jcrysgro.2011.01.044 ↗
28. Understanding the microwave annealing of silicon10.1063/1.4978912 ↗
29. Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review10.1109/TED.2014.2300898 ↗
30. Activation of Al2O3 passivation layers on silicon by microwave annealing10.1007/s00339-013-7943-5 ↗
31. Microwave Annealing as a Low Thermal Budget Technique for ZnO Thin-Film Transistors Fabricated Using Atomic Layer Deposition10.1109/LED.2017.2740221 ↗
32. Structural and Optical Properties of Amorphous Al2O3 Thin Film Deposited by Atomic Layer Deposition10.1155/2018/7598978 ↗
33. XPS, FTIR, EDX, and XRD Analysis of Al2O3 Scales Grown on PM2000 Alloy10.1155/2015/868109 ↗
34. Sayigh, A. (2012). Crystalline Silicon Solar Cells. Comprehensive Renewable Energy, Elsevier.
35. Study of aluminium oxide thin films deposited by plasmaenhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: Investigation of interfacial and structural properties10.1016/j.tsf.2018.09.028 ↗
36. Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data10.1063/1.117723 ↗
37. Atomic Layer Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells10.1109/JPHOTOV.2014.2344771 ↗
38. Quasi-steady-state photoconductance bulk lifetime measurements on silicon ingots with deeper photogeneration10.1063/1.5086378 ↗
39. Optimizing annealing steps for crystalline silicon solar cells with screen printed front side metallization and an oxide-passivated rear surface with local contacts10.1002/pip.919 ↗
40. Dauwe, S., Schmidt, J., and Hezel, R. (2002, January 19–24). Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films. Proceedings of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, New Orleans, LA, USA.
41. Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon10.1016/j.solmat.2009.01.023 ↗
42. Use of QSSPC and QSSPL to monitor recombination processes in p-type silicon solar cells10.1016/j.egypro.2014.08.110 ↗
43. Electronic and chemical properties of the c-Si/Al2O3 interface10.1063/1.3587227 ↗
44. Thermal annealing effects on the structural and electrical properties of HfO2 / Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates10.1063/1.1590414 ↗