Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B4C/Si Nano-Multilayers
Source abstract
Abstract
Pulsed-radio frequency glow discharge optical emission spectrometry (Pulsed-RF-GDOES) has exhibited great potential for high resolution (HR) depth profiling. In this paper, the measured GDOES depth profile of 60 × Mo (3 nm)/B4C (0.3 nm)/Si (3.7 nm) was quantified by employing the newly extended Mixing-Roughness-Information depth (MRI) model. We evaluated the influences of the thickness and sputtering rate on the depth profile of very thin layers. We demonstrated that a method using the full width at half maximum (FWHM) value of the measured time-concentration profile for determining the sputtering rate and the corresponding thickness was not reliable if preferential sputtering took place upon depth profiling.
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Research context
OpenAlex topics: Ion-surface interactions and analysis · Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry, Shantou University, 243 Daxue Road, Shantou 515063, China
Department of Physics, Shantou University, 243 Daxue Road, Shantou 515063, China
Department of Physics, University of the Free State, Bloemfontein 9300, South Africa
HORIBA France, Bd Thomas Gobert, 91120 Palaiseau, France
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