Effects of Substrates on the Performance of Pt Thin-Film Resistance Temperature Detectors
Source abstract
Abstract
Pt thin-film resistance temperature detectors (RTDs) have been fabricated by magnetron sputtering on various substrates, including silica, polyimide (PI) and LaAlO3 (LAO) (100) single crystal. The influences of different substrates on the performance of Pt thin-film RTDs have been studied. It is revealed that the substrates exhibit a significant dependence on the temperature coefficient of resistance (TCR). Silica, PI and LAO substrates yield TCRs of 3.2 × 10−3, 2.7 × 10−3 and 3.4 × 10−3 /K, respectively. The Pt thin-film RTDs on LAO substrate exhibit a significantly larger TCR, compared to most of the other reported values. These devices also demonstrate a fast response time of 680 μs, which is shorter than that of many other reported RTDs. Furthermore, Pt thin-film RTDs on PI substrates could serve as flexible detectors, maintaining a consistent linear relationship between resistance and temperature even when bent.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor Technologies Research · Electrical and Thermal Properties of Materials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Space Science and Physics, Shandong University, Weihai 264209, China
Shandong Hualing Electronics Co., Ltd., Weihai 264209, China
Weihai Research Institute of Industrial Technology of Shandong University, Shandong University, Weihai 264209, China
Funding
Key R&D Program of Shandong Province · Natural Science Foundation of Shandong Province · Qilu Young Scholar at Shandong University · Physical-Chemical Materials Analytical & Testing Center of Shandong University at Weihai
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