Effect of Ion-Assisted Deposition Energy of RF Source on Optical Properties, Microstructure, and Residual Stress of HfO2 Thin Films
Source abstract
Abstract
HfO2 thin films were prepared using radio frequency (RF) ion source-assisted deposition, and the effects of auxiliary ion energy on the microstructure, optical properties, and residual stress of the films were systematically studied. The experimental results showed that when the auxiliary ion energy increased, the extinction coefficient, compressive stress, and optical band gap were gradually increased. These changes were attributed to increased grain boundary defects, crystal structure disorder, and grain size decrease due to high-energy ion bombardment. The HfO2 films deposited at a lower ion energy (600 V) exhibited higher surface quality (RMS = 0.78 nm), better optical properties (k = 10⁻5), and lower residual stress (1.26 GPa).
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Research context
OpenAlex topics: Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
University of Chinese Academy of Sciences, Beijing 100039, China
Key Laboratory of Advanced Manufacturing for Optical Systems, Chinese Academy of Sciences, Changchun 130033, China
State Key Laboratory of Applied Optics, Changchun 130033, China
Funding
National Key R&D Program of China · National Natural Science Foundation of China · Chinese Academy of Sciences · Ministry of Public Security’s Technical Research Program
References (40)
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