The Effects on Stability and Electronic Structure of Si-Segregated θ′/Al Interface Systems in Al-Cu Alloys

This study systematically investigates the energy and electronic properties of Si-segregated θ′(Al2Cu)/Al semi-coherent and coherent interface systems in Al-Cu alloys using ab initio calculations. By evaluating the bonding strength at the interface, it has been revealed that Si segregated at the A1 site (Al slab) of the semi-coherent interface systems exhibits the most negative segregation energy, resulting in a noticeable decrease in total energy and an increase in interface adhesion. The electronic structure analysis indicates the presence of Al-Cu and Al-Al bonds, with Si occupying the A1 site. The strong bond formation between Al-Cu and Al-Al is essential for improving interface bonding strength. The results of the calculating analyses are consistent with the results of the previous experiments, and Si can be used as a synergistic element to reduce the θ′/Al interface energy and further reduce the coarsening drive of the θ′ precipitated phase, which can provide new perspectives and computational ideas for the compositional design of heat-resistant Al-Cu alloys.