Enhanced Thermoelectric Properties of Sb2Te3 Thin Films by In Doping
Source abstract
Abstract
Flexible Sb2Te3-based thermoelectric (TE) materials are promising candidates for fabricating energy devices that power wearable electronics and sensors. Enhancing the TE properties of Sb2Te3 thin films represents a significant scientific investigation. In this work, a thermal diffusion method is applied to prepare the In-doped Sb2Te3 thin film. In doping can lead to a high Seebeck coefficient of ~137.04 μV K−1 as well as moderate electrical conductivity. As a result, the high power factor of ~18.22 μW cm−1 K−2 at 303 K is achieved. Moreover, In doping could reduce the thermal conductivity owing to the increase in phonon scattering. Finally, the high ZT values of ~0.47 at room temperature (303 K) and ~0.6 at 453 K are obtained. This indicates that In doping is a highly promising and effective approach to improving the TE performance of Sb2Te3 thin films.
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Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal Radiation and Cooling Technologies · Thermal properties of materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
School of Machinery and Automation, Weifang University, Weifang 261061, China
College of Chemical Engineering, Tianjin University, Tianjin 300072, China
Funding
National Natural Science Foundation of China · Guangdong Basic and Applied Basic Research Foundation
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