Optical Absorption in Si:H Thin Films: Revisiting the Role of the Refractive Index and the Absorption Coefficient
Source abstract
Abstract
This paper reports on absorption properties of thin films of hydrogenated amorphous and microcrystalline silicon considered for absorption-based applications, such as solar cell, photodetectors, filters, sensors, etc. A series of four amorphous and four microcrystalline samples PECVD deposited under varied hydrogen dilution was under consideration. Various absorption metrics, based separately on the absorption coefficient and the refractive index (single pass absorption, optical path length, classical light trapping limit) or direct absorptance calculated by the Yablonovitch concept based on a mutual role of them were examined and compared. Differences in absorption abilities are related to the evolving thin film microstructure.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Aurel Stodola, Faculty of Electrical Engineering and Communication Technologies, University of Žilina, 031 01 Liptovský Mikuláš, Slovakia
New Technology Research Center, University of West Bohemia, Univerzitní 8, 306 14 Plzeň, Czech Republic
Funding
Agentúra na Podporu Výskumu a Vývoja
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