Design and Fabrication of Temperature-Compensated Film Bulk Acoustic Resonator Filter Based on the Stress Compensation Effect

To ensure that the performance of filters matches the continuous development in communication frequency bands, the influence of temperature on filter performance must be considered during the fabrication of filters. In this study, a cavity-type temperature-compensated film bulk acoustic resonator (TC-FBAR) device was prepared with an SiO2 temperature filter between the bottom electrode and the piezoelectric layer. A one-dimensional Mason model of the TC-FBAR was established. An advanced design system, a high-frequency structure simulator, and COMSOL software were used to optimize the design of the TC-FBAR. After the optimization, the out-of-band rejection was improved by 10 dB. To address the compensation effect of the tensile and compressive stresses, a multilayer film was implemented for low-stress control and a reduction in stress to |P| ≤ 150 MPa, thereby improving the orientation of the piezoelectric film. Moreover, the influence of the thickness of the SiO2 temperature-compensated layers on the temperature-compensated characteristics was studied. When the SiO2 thickness was 50 nm, the temperature coefficient of frequency (TCF) was ±1 ppm/°C. The center frequency and 3 dB bandwidth of TC-FBAR were 2.492 GHz and 15.02 MHz, respectively, and the center insertion loss was −3.1 dB. Moreover, the out-of-band rejection was greater than 40 dBc, and TCF was 0.8 ppm/°C.