Preparation of High-Thickness n−-Ga2O3 Film by MOCVD
Source abstract
Abstract
The homoepitaxial Si-doped Ga2O3 film prepared by metal–organic chemical vapor deposition (MOCVD) was reported in this paper. The film thickness reached 4.5 microns, a relatively high value for MOCVD. The full width at half maxima of the (002) diffraction plane of the film was 26.3 arcsec, thus showing high crystalline quality. The film showed n−-type properties with a doping concentration of 3.6 × 1016 cm−3 and electron mobility of 137 cm2/V·s. In addition, the element composition and stress state of the film were characterized and analyzed. This indicates that the MOCVD, supporting high-quality, high-precision epitaxy, is promising for Ga2O3 power devices.
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Xincheng Street 5088, Changchun 130118, China
Funding
National Natural Science Foundation of China · National Key Research and Development Program · Science and Technology Developing Project of Jilin Province
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