Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure
Source abstract
Abstract
In this work, we present the nonlinear current–voltage (I–V) characteristics of a complementary resistive switching (CRS)-like curve from a HfAlOx-based memristor, used to implement a high-density cross-point array. A Pt/HfAlOx/TiN device has lower on-current and larger selectivity compared to Pt/HfO2/TiN or Pt/Al2O3/TiN devices. It has been shown that the on-current and first reset peak current after the forming process are crucial in obtaining a CRS-like curve. We demonstrate transient CRS-like characteristics with high nonlinearity under pulse response for practical applications. Finally, after finding the optimal conditions for high selectivity, the calculated read margin proves that a Pt/HfAlOx/TiN device with a CRS-like curve is most suitable for use in a high-density cross-point array. Our results suggest that the built-in selector properties in a Pt/HfAlOx/TiN single layer device offer considerable potential in terms of the simplicity of the processes involved in the cross-point structure.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea
Funding
National Research Foundation of Korea
References (38)
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