Structural Characteristics and Photoluminescence Properties of Sputter-Deposition ZnGa2O4 Thin Films on Sapphire and Si(100) Substrates
Source abstract
Abstract
In this paper, we report the growth and material characteristics of ZnGa2O4 thin films on c-plane sapphire and Si(100) substrates by a radio-frequency magnetron sputtering. When deposited on sapphire, the ZnGa2O4 film showed a polycrystalline nature and a less randomly oriented, primarily with the (111), (222) and (511) planes parallel to the substrate surface. On Si(100), the ZnGa2O4 thin film was randomly oriented with (311)- and (020)-plane polycrystalline properties. Transmission electron microscopy analysis revealed that an amorphous-layer interface was formed on the Si(100) substrate and the microstructure of ZnGa2O4 became disordered. The ZnGa2O4/sapphire emitted ultraviolet photoluminescence and green emissions. The dominant optical transitions depended on the deposition temperature, oxygen and Zn contents, and nature of the substrate. The structural and optical properties of sputter-deposited ZnGa2O4 thin film on sapphire indicated that sapphire substrate is suitable for the growth of crystalline, high-quality ZnGa2O4 thin film.
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Research context
OpenAlex topics: Ga2O3 and related materials · Luminescence Properties of Advanced Materials · Microwave Dielectric Ceramics Synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan
Department of Industrial Engineering and Management, Da-Yeh University, Changhua 51591, Taiwan
Graduate Institute of Materials Science and Green Energy Engineering, National Formosa University, Huwei, Yunlin 632, Taiwan
Funding
Ministry of Science and Technology, Taiwan
References (37)
Show source-provided references
1. New ultraviolet-transport electroconductive oxide, ZnGa2O4 spinel10.1063/1.110937 ↗
2. The ZnGa2O4 phosphor for low-voltage blue cathodoluminescence10.1149/1.2085816 ↗
3. New electron excited light-emitting materials10.1116/1.587346 ↗
4. Photoluminescence properties of ZnGa2O4: Mn powder phosphors10.1063/1.359627 ↗
5. Luminescence of Cr3+ doped ZnGa2O4 thin films deposited by pulsed laser ablation10.1016/j.tsf.2012.07.088 ↗
6. Formation of ZnGa2O4 films by multilayer deposition and subsequent thermal annealing10.1088/1674-1056/23/4/048105 ↗
7. Preparation and optical properties of ZnGa2O4:Cr3+ thin films derived by sol-gel process10.1016/j.apsusc.2010.02.077 ↗
8. Epitaxial growth of ZnGa2O4: A new, deep ultraviolet semiconductor candidate10.1021/acs.cgd.7b01159 ↗
9. Pulsed laser deposition of ZnGa2O4 phosphor films10.1016/j.surfcoat.2004.10.072 ↗
10. Enhanced luminescence properties of ZnGa2O4:Cr3+ nanoparticles with an average crystallite size of 5 nm10.1016/j.jssc.2018.10.003 ↗
11. Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques10.1088/0957-4484/26/33/335603 ↗
12. Solution growth of screw dislocation driven alpha-GaOOH nanorod arrays and their conversion to porous ZnGa2O4 nanotubes10.1021/acs.chemmater.7b01930 ↗
13. NO gas sensor based on ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition10.1038/s41598-019-43752-z ↗
14. Deep-ultraviolet photodetectors based on epitaxial ZnGa2O4 thin films10.1038/s41598-018-32412-3 ↗
15. Characteristics of metal oxide semiconductor field-effect transistors of ZnGaO grown on sapphire substrate
16. Sputtering physical vapour deposition (PVD) coatings: A critical review on process improvement and market trend demands10.3390/coatings8110402 ↗
17. Transparent electrode design for AlGaN deep ultraviolet light-emitting diodes10.1364/OE.25.032206 ↗
18. Enhanced photoluminescence property and broad color emission of ZnGa2O4 phosphor due to the synergistic role of Eu3+ and carbon dots10.1016/j.optmat.2017.06.013 ↗
19. Wang, W.K., Huang, S.Y., Jiang, M.C., and Wuu, D.S. (2017). Optoelectronic properties and structural characterization of GaN thick films on different substrates through pulsed laser deposition. Appl. Sci., 7.10.3390/app7010087 ↗
20. X-ray diffraction study of AlN/AlGaN short period superlattices10.1063/1.2821358 ↗
21. Effects of annealing temperature on amorphous GaN films formed on Si(111) by pulsed laser deposition10.1088/0268-1242/24/8/085024 ↗
22. Photoluminescence behavior of pulsed laser deposited ZnGa2O4 thin-film phosphors grown on various substrates10.1007/s00339-002-1898-2 ↗
23. Characterization of aluminum gallium oxide films grown by pulsed laser deposition10.1016/j.ceramint.2018.09.232 ↗
24. Microstructural improvement of sputtered ZrO2 thin films by substrate biasing10.1016/j.mseb.2005.04.002 ↗
25. Synthesis and luminescence properties of ZnGa2O4 spinel doped with Co2+ and Eu3+ ions10.1016/j.apsusc.2012.08.112 ↗
26. Correspondence between host crystal conditions and emission spectrum shape of Eu3+ ions doped in ZnO and ZnGa2O4 films10.1063/1.5042660 ↗
27. Effects of preparation method and temperature on the cation distribution of ZnGa2O4 spinel studied by X-ray photoelectron spectroscopy10.1016/j.vacuum.2017.04.035 ↗
28. Synthesis and characterization of ZnGa2O4 particles prepared by solid state reaction10.1016/j.jallcom.2012.08.137 ↗
29. Growth of ZnGa2O4 phosphor by radio frequency magnetron sputtering10.1149/1.2054971 ↗
30. Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition10.1016/j.jcrysgro.2013.10.012 ↗
31. Luminescent properties and structural characteristics of sputter-deposited ZnGa2O4: Mn phosphor thin films10.1116/1.4738950 ↗
32. Blue photoluminescence in ZnGa2O4 thin-film phosphors10.1063/1.1287228 ↗
33. Low voltage cathodoluminescence of Mn2+-activated ZnGa2O410.1149/1.2055086 ↗
34. Electronic structure and optical properties of europium-activated yttrium oxide phosphor10.1103/PhysRevB.45.10902 ↗
35. Luminescence characteristics of ZnGa2O4 thin film phosphors grown by pulsed laser deposition10.1016/S0167-577X(02)00893-5 ↗
36. Cathodoluminescent characteristics of ZnGa2O4 phosphor grown by radio frequency magnetron sputtering10.1063/1.358500 ↗
37. Computational study and characteristics of In2S3 thin films: Effects of substrate nature and deposition temperature10.1088/1361-6641/ab0446 ↗