journal article·2022-08-09Open access

Recent Advances of Preparation and Application of Two-Dimension van der Waals Heterostructure

Luhang Song, Moru Song, Zongyu Lu, Gang Yu, Zhan Liang, Wei Hou, Qingwei Liao, Yujun Song

Coatings· Volume 12· Issue 8

Abstract

With paramount electrical, optical, catalytic, and other physical and chemical properties, van der Waals heterostructures (vdWHs) have captured increasing attention. vdWHs are two-dimension (2D) heterostructures formed via van der Waals (vdW) force, paving the way for fabricating, understanding, and applications of 2D materials. vdWHs materials of large lattice constant difference can be fabricated together, forming a series of unique 2D materials that cannot form heterostructures earlier. Additionally, vdWHs provide a new platform to study the interlayer interactions between materials, unraveling new physics in the system. Notably, vdWHs embody short-range bonds weaker than covalent and ionic bonds, almost only interactions between nearest particles are considered. Owing to a clear interface, vdW interaction between two different components, devices made by vdWHs can bring amazing physicochemical properties, such as unconventional superconductivity, super capacitance in intercalation 2D structure, etc. Recently, impressive progress has been achieved in the controlled preparation of vdWHs and various applications, which will be summarized in this review. The preparation methods comprise mechanical exfoliation, liquid phase stripping, physical vapor deposition, chemical vapor deposition, and metalorganic chemical vapor deposition. The applications sections will focus on photoelectric devices, logic devices, flexible devices, and piezotronics. Finally, some perspectives in the future on the controlled preparation of vdWHs with desired properties for advanced applications will be discussed.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Modern Physics Technology, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China

School of Material Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

Key Laboratory of Sensors Technology, Beijing Information Science & Technology University, Beijing 100192, China

Key Laboratory of Pulsed Power Translational Medicine of Zhejiang Province, Hangzhou Ruidi Biotechnology Company Ltd., Room 803, Bldg. 4, 4959 Yuhangtang Road, Cangqian Street, Hangzhou 310023, China

Funding

BRICS STI Framework Programme by NSFC · National Natural Science Foundation of China · National S&T Major Project of China · Student Research Training Program

References (100+)

Show source-provided references
1. Electric field effect in atomically thin carbon films10.1126/science.1102896 ↗
2. Van der Waals integration before and beyond two-dimensional materials10.1038/s41586-019-1013-x ↗
3. Mapping the twist-angle disorder and Landau levels in magic-angle graphene10.1038/s41586-020-2255-3 ↗
4. Tunable correlated states and spin-polarized phases in twisted bilayer-bilayer graphene10.1038/s41586-020-2260-6 ↗
5. Superconductivity in metallic twisted bilayer graphene stabilized by WSe210.1038/s41586-020-2473-8 ↗
6. Superconductors, orbital magnets and correlated states in magic-angle bilayer graphene10.1038/s41586-019-1695-0 ↗
7. Unconventional superconductivity in magic-angle graphene superlattices10.1038/nature26160 ↗
8. Electric field–tunable superconductivity in alternating-twist magic-angle trilayer graphene10.1126/science.abg0399 ↗
9. Pauli-limit violation and re-entrant superconductivity in moiré graphene10.1038/s41586-021-03685-y ↗
10. Evidence for unconventional superconductivity in twisted trilayer graphene10.1038/s41586-022-04715-z ↗
11. A two-dimensional MoS2/WSe2 van der Waals heterostructure for enhanced photoelectric performance10.1016/j.apsusc.2019.145082 ↗
12. Hexagonal Boron Nitride for Surface Passivation of Two-Dimensional van der Waals Heterojunction Solar Cells10.1021/acsami.9b11219 ↗
13. Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures10.1038/s41598-021-87442-1 ↗
14. Strain-tunable electronic and optical properties in two dimensional GaSe/g-C3N4 van der Waals heterojunction as photocatalyst for water splitting10.1016/j.physe.2019.113896 ↗
15. Emergence of Highly Linearly Polarized Interlayer Exciton Emission in MoSe2/WSe2 Heterobilayers with Transfer-Induced Layer Corrugation10.1021/acsnano.0c01146 ↗
16. Twist Angle-Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures10.1103/PhysRevLett.126.047401 ↗
17. Two-dimensional van der Waals electrical contact to monolayer MoSi2N410.1063/5.0033241 ↗
18. Electrical switching of magnetic order in an orbital Chern insulator10.1038/s41586-020-2963-8 ↗
19. Unipolar barrier photodetectors based on van der Waals heterostructures10.1038/s41928-021-00586-w ↗
20. Pressure control of the magnetic anisotropy of the quasi-two-dimensional van der Waals ferromagnet Cr2Ge2Te610.1103/PhysRevB.103.024404 ↗
21. Giant enhancement of perpendicular magnetic anisotropy and induced quantum anomalous Hall effect in graphene/NiI2 heterostructures via tuning the van der Waals interlayer distance10.1103/PhysRevB.101.214439 ↗
22. Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in van der Waals Ferroelectric Heterojunctions10.1002/adma.201908040 ↗
23. Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe210.1002/advs.202003713 ↗
24. Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors10.1038/s41928-021-00566-0 ↗
25. Emerging 2D Memory Devices for In-Memory Computing10.1002/adma.202007081 ↗
26. A MoS2 and Graphene Alternately Stacking van der Waals Heterostructure for Li+/Mg2+ Co-Intercalation10.1002/adfm.202103214 ↗
27. Tailoring the Interfacial Interactions of van der Waals 1T-MoS2/C60 Heterostructures for High-Performance Hydrogen Evolution Reaction Electrocatalysis10.1021/jacs.0c08867 ↗
28. Harnessing Ionic Power from Equilibrium Electrolyte Solution via Photoinduced Active Ion Transport through van-der-Waals-like Heterostructures10.1002/adma.202007529 ↗
29. Observation of site-controlled localized charged excitons in CrI3/WSe2 heterostructures10.1038/s41467-020-19262-2 ↗
30. 2D van der Waals Heterojunction of Organic and Inorganic Monolayers for High Responsivity Phototransistors10.1002/adfm.202105444 ↗
31. Van der waals heterojunctions for catalysis10.1016/j.mtadv.2020.100059 ↗
32. High-efficiency photocatalyst for water splitting: A Janus MoSSe/XN (X = Ga, Al) van der Waals heterostructure10.1088/1361-6463/ab71ad ↗
33. Van der Waals heterostructures and devices10.1038/natrevmats.2016.42 ↗
34. Van der Waals heterostructures10.1038/nature12385 ↗
35. Two-dimensional atomic crystals10.1073/pnas.0502848102 ↗
36. Boron nitride substrates for high-quality graphene electronics10.1038/nnano.2010.172 ↗
37. Tunable metal–insulator transition in double-layer graphene heterostructures10.1038/nphys2114 ↗
38. Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices10.1038/nmat3386 ↗
39. Field-effect tunneling transistor based on vertical graphene heterostructures10.1126/science.1218461 ↗
40. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters10.1038/nmat3518 ↗
41. One-dimensional electrical contact to a two-dimensional material10.1126/science.1244358 ↗
42. Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures10.1038/nature23905 ↗
43. Correlated insulator behaviour at half-filling in magic-angle graphene superlattices10.1038/nature26154 ↗
44. Evidence for moire excitons in van der Waals heterostructures10.1038/s41586-019-0975-z ↗
45. Signatures of moire-trapped valley excitons in MoSe2/WSe2 heterobilayers10.1038/s41586-019-0957-1 ↗
46. Observation of moire excitons in WSe2/WS2 heterostructure superlattices10.1038/s41586-019-0976-y ↗
47. Neel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure10.1038/s41467-020-17566-x ↗
48. Optimization of Mechanically Assembled Van Der Waals Heterostructure Based On Solution Immersion and Hot Plate Heating10.1088/1742-6596/2152/1/012007 ↗
49. Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity10.1038/s41377-022-00784-x ↗
50. Fourfold Polarization-Sensitive Photodetector Based on GaTe/MoS2 van der Waals Heterojunction10.1002/aelm.202100673 ↗
51. Cleaning interfaces in layered materials heterostructures10.1038/s41467-018-07558-3 ↗
53. Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication10.1002/anie.201106004 ↗
54. A new strategy of three-liquid-phase partitioning for stripping of heavy rare earths from the loaded organic phase10.1016/j.seppur.2020.117386 ↗
55. Boosting Photocatalytic Activity Using Carbon Nitride Based 2D/2D van der Waals Heterojunctions10.1021/acs.chemmater.1c03166 ↗
56. N, P-Codoped Graphene Dots Supported on N-Doped 3D Graphene as Metal-Free Catalysts for Oxygen Reduction10.1021/acsami.1c03141 ↗
57. Large-Area Vapor-Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate10.1002/smll.201102654 ↗
58. Atomic-Scale Structure of Single-Layer MoS2 Nanoclusters10.1103/PhysRevLett.84.951 ↗
59. Identification of single nanoparticles10.1039/C0NR00412J ↗
60. Interface interaction induced ultra-dense nanoparticles assemblies10.1039/c3nr01366a ↗
61. Magneto-Plasmons in Periodic Nanoporous Structures10.1038/srep04991 ↗
62. Fabrication of one-dimension ZnSe and ZnO nanostructures via anodic alumina template assisted vapor–liquid–solid growth process10.1016/j.tsf.2013.09.029 ↗
63. Atomic layer deposition—State-of-the-art approach to nanoscale hetero-interfacial engineering of chemical sensors electrodes: A review10.1016/j.snb.2020.129403 ↗
64. Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures10.1021/acsnano.1c00544 ↗
65. Anomalous Lattice Vibrations of Single- and Few-Layer MoS210.1021/nn1003937 ↗
66. Single-Layer MoS2 Phototransistors10.1021/nn2024557 ↗
67. Visibility of dichalcogenide nanolayers10.1088/0957-4484/22/12/125706 ↗
68. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides10.1038/nnano.2012.193 ↗
69. Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe210.1038/s41699-022-00285-w ↗
70. Two-dimensional heterostructures and their device applications: Progress, challenges and opportunities—Review10.1088/1361-6463/ac16a4 ↗
71. Vertical and in-plane heterostructures from WS2/MoS2 monolayers10.1038/nmat4091 ↗
72. Chemical Vapor Deposition of High-Quality and Atomically Layered ReS210.1002/smll.201501488 ↗
73. Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate10.1002/adma.201600722 ↗
74. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide10.1038/nmat3633 ↗
75. Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS2 Monolayer from Chemical Vapor Deposition10.1002/adom.201300428 ↗
76. Large-Area Epitaxial Monolayer MoS210.1021/acsnano.5b01281 ↗
77. The role of substrate on the growth of 2D heterostructures by CVD10.1016/j.apsusc.2020.148226 ↗
78. Interlayer Energy Transfer and Photoluminescence Quenching in MoSe2/Graphene van der Waals Heterostructures for Optoelectronic Devices10.1021/acsanm.1c02599 ↗
79. General synthesis of mixed-dimensional van der Waals heterostructures with hexagonal symmetry10.1088/1361-6528/ac291d ↗
80. High-order superlattices by rolling up van der Waals heterostructures10.1038/s41586-021-03338-0 ↗
81. Synthesis of AAB-Stacked Single-Crystal Graphene/hBN/Graphene Trilayer van der Waals Heterostructures by In Situ CVD10.1002/advs.202201324 ↗
82. MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics10.1063/5.0049306 ↗
83. Low-Temperature and Large-Scale Production of a Transition Metal Sulfide Vertical Heterostructure and Its Application for Photodetectors10.1021/acsami.0c19666 ↗
84. Direct Fabrication of Vertically Stacked Double Barrier Tunnel Junctions Based on Graphene and h-BN10.1007/s13391-022-00342-y ↗
85. Universal interface and defect engineering dual-strategy for graphene-oxide heterostructures toward promoted Li–S chemistry10.1016/j.cej.2021.129407 ↗
86. Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications10.1021/acs.accounts.0c00757 ↗
87. Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus10.1016/j.isci.2022.103947 ↗
88. Artificial Neuron Networks Enabled Identification and Characterizations of 2D Materials and van der Waals Heterostructures10.1021/acsnano.1c09644 ↗
89. Chemical vapour deposition of coatings10.1016/S0079-6425(01)00009-3 ↗
90. Two stage epitaxial growth of wafer-size multilayer h-BN by metal-organic vapor phase epitaxy—A homoepitaxial approach10.1088/2053-1583/abbd1f ↗
91. MOCVD technology for semiconductors10.1016/S0167-577X(96)00215-7 ↗
92. Metal–organic chemical vapor deposition of 2D van der Waals materials—The challenges and the extensive future opportunities10.1063/1.5142601 ↗
93. Zheng, W., Saiz, F., Shen, Y., Zhu, K., Liu, Y., McAleese, C., Conran, B., Wang, X., and Lanza, M. (2021). Defect-Free Metal Deposition on 2D Materials via Inkjet Printing Technology. Adv. Mater., 2104138.10.1002/adma.202104138 ↗
94. Photovoltaic Field-Effect Photodiodes Based on Double van der Waals Heterojunctions10.1021/acsnano.1c02830 ↗
95. Magnetic field modulated photoelectric devices in ferromagnetic semiconductor CrXh (X = S/Se, h = Cl/Br/I) van der Waals heterojunctions10.1063/5.0055764 ↗
96. 2D MoTe2/ReS2 van der Waals Heterostructure for High-Performance and Linear Polarization-Sensitive Photodetector10.1021/acsphotonics.1c00598 ↗
97. A high-performance self-powered photodetector based on WSe2–graphene–MoTe2 van der Waals heterojunctions10.1039/D2TC01441F ↗
98. Room-Temperature Blackbody-Sensitive and Fast Infrared Photodetectors Based on 2D Tellurium/Graphene Van der Waals Heterojunction10.1021/acsphotonics.2c00246 ↗
99. PdSe2/MoSe2 vertical heterojunction for self-powered photodetector with high performance10.1007/s12274-021-3745-9 ↗
100. Two-Dimensional Cs2AgBiBr6/WS2 Heterostructure-Based Photodetector with Boosted Detectivity via Interfacial Engineering10.1021/acsnano.1c09513 ↗