Electrical Defect State Distribution in Single Crystal ZnO Schottky Barrier Diodes
Source abstract
Abstract
The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77–340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottky barrier diodes. A major defect level was observed, with a thermal activation energy of 0.27 eV (E3) within the defect state distribution from 0.1 to 0.57 eV below the conduction band minimum. We confirmed the maximum defect concentration to be 3.66 × 1016 cm−3 at 0.27 eV (E3). As a result, we clearly confirmed the distribution of density of defect states in the ZnO band gap.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095, USA
School of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, Korea
Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA
Funding
National Research Foundation of Korea
References (33)
Show source-provided references
1. Jagadish, C., and Pearton, S.J. (2006). Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties, and Applications, Elsevier. [1st ed.].
2. Transparent electronics10.1126/science.1085276 ↗
3. ACMBG Pi-mentel, AMF Goncalves, AJS Marques and LMN Pereira10.1002/adma.200400368 ↗
4. Zinc oxide: Bulk growth, role of hydrogen and Schottky diodes10.1088/0022-3727/42/15/153001 ↗
5. A comprehensive review of ZnO materials and devices10.1063/1.1992666 ↗
6. Structural and optical properties of epitaxial and bulk ZnO10.1063/1.1464218 ↗
7. Hydrogen: A relevant shallow donor in zinc oxide10.1103/PhysRevLett.88.045504 ↗
8. Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO10.1063/1.2806194 ↗
9. Deep level transient spectroscopy studies of n-type ZnO single crystals grown by different techniques
10. Oxygen vacancy and EC− 1 eV electron trap in ZnO10.1088/0022-3727/47/46/465103 ↗
11. High energy electron irradiation effects on electrical properties of Au/n-ZnO Schottky diodes10.1088/0022-3727/41/10/105301 ↗
12. Morimoto, Distributions of Interface States and Bulk Traps in ZnO Varistors10.1143/JJAP.40.213 ↗
13. Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctions10.1063/1.1663719 ↗
14. The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO
15. Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration10.1103/PhysRevB.95.245204 ↗
16. Schottky diode with Ag on (1120) epitaxial ZnO film10.1063/1.1463700 ↗
17. Metal Schottky diodes on Zn-polar and O-polar bulk ZnO10.1063/1.2346137 ↗
18. ZnO Schottky barriers and Ohmic contacts10.1063/1.3581173 ↗
19. Surface passivation and interface reactions induced by hydrogen peroxide treatment of n-type ZnO (000 1)10.1063/1.3106052 ↗
20. Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy10.1063/1.2978374 ↗
21. Electrical characterization of growth-induced defects in bulk-grown ZnO10.1016/j.spmi.2005.08.021 ↗
22. Effect of high temperature treatments on defect centers and impurities in hydrothermally grown ZnO10.1016/j.physb.2009.09.029 ↗
23. Hydrogen peroxide treatment induced rectifying behavior of Au∕ n-Zn O contact10.1063/1.2715025 ↗
24. Contacts to ZnO10.1016/j.jcrysgro.2005.10.059 ↗
25. Schroder, D.K. (2006). Semiconductor Material and Device Characterization, John Wiley & Sons, Inc.. [3rd ed.].10.1002/0471749095 ↗
26. Sze, S.M., and Ng, K.K. (2007). Physics of Semiconductor Devices., John Wiley & Sons, Inc.. [3rd ed.].10.1002/0470068329 ↗
27. and Van de Walle, C.G. Native point defects in ZnO10.1103/PhysRevB.76.165202 ↗
28. First-principles study of native point defects in ZnO10.1103/PhysRevB.61.15019 ↗
29. Oxygen vacancies in ZnO10.1063/1.2053360 ↗
30. Fundamentals of zinc oxide as a semiconductor10.1088/0034-4885/72/12/126501 ↗
31. Residual native shallow donor in ZnO10.1103/PhysRevLett.82.2552 ↗
32. Svensson, B.G., and Pearton, S.J. (2013). Semiconductors and Semimetals: Oxide Semiconductors, Academic Press. [1st ed.]. SEMSEM.
33. Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode10.1063/1.4867236 ↗