Plasma Etching Behavior of SF6 Plasma Pre-Treatment Sputter-Deposited Yttrium Oxide Films
Source abstract
Abstract
Yttrium oxyfluoride (YOF) protective materials were fabricated on sputter-deposited yttrium oxide (Y2O3) by high-density (sulfur fluoride) SF6 plasma irradiation. The structures, compositions, and fluorocarbon-plasma etching behaviors of these films were systematically characterized by various techniques. After exposure to SF6 plasma, the Y2O3 film surface was fluorinated significantly to form a YOF film with an approximate average thickness of 30 nm. X-ray photoelectron spectroscopy revealed few changes in the elemental and chemical compositions of the surface layer after fluorination, confirming the chemical stability of the YOF/Y2O3 sample. Transmission electron microscopy confirmed a complete lattice pattern on the YOF/Y2O3 structure after fluorocarbon plasma exposure. These results indicate that the SF6 plasma-treated Y2O3 film is more erosion resistant than the commercial Y2O3 coating, and thus accumulates fewer contamination particles.
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Research context
OpenAlex topics: ZnO doping and properties · Plasma Diagnostics and Applications · Silicone and Siloxane Chemistry
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan
Graduate Institute of Materials Science and Green Energy Engineering, National Formosa University, Huwei, Yunlin 632, Taiwan
Department of Industrial Engineering and Management, Da-Yeh University, Changhua 51591, Taiwan
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