Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering
Source abstract
Abstract
Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the grown ZnGa2O4 thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900 °C. Excess Ga released from ZnGa2O4 during thermal annealing treatment resulted in the appearance of a Ga2O3 phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa2O4 (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa2O4 thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa2O4 thin film improved at higher annealing temperatures.
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Luminescence Properties of Advanced Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan
Graduate Institute of Materials Science and Green Energy Engineering, National Formosa University, Huwei, Yunlin 632, Taiwan
Department of Industrial Engineering and Management, Da-Yeh University, Changhua 51591, Taiwan
Funding
Ministry of Science and Technology, Taiwan (R. O. C.)
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