Characterization of CdxTeyOz/CdS/ZnO Heterostructures Synthesized by the SILAR Method
Source abstract
Abstract
CdxTeyOz/CdS/ZnO heterostructures were obtained by the SILAR method using ionic electrolytes. A CdS film was formed as a buffer layer for better adhesion of the cadmium-tellurium oxides to the substrate surface. In turn, the ZnO substrate was previously prepared by electrochemical etching to form a rough textured surface. In addition, an annealing mode was used in an oxygen stream to complete the oxidation process of the heterostructure surface. The resulting nanocomposite was investigated using RAMAN, XRD, SEM, and EDX methods. We assume that the oxides CdO and TeO4 initially form on the surface and later evolve into TeO2 and TeO3 when saturated with oxygen. These oxides, in turn, are the components of the ternary oxides CdTeO3 and CdTe3O8. It should be noted that this mechanism has not been fully studied and requires further research. However, the results presented in this article make it possible to systematize the data and experimental observations regarding the formation of cadmium-tellurium films.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
The Department of Physics and Methods of Teaching Physics, Berdyansk State Pedagogical University, 71100 Berdyansk, Ukraine
Centro de Investigación en Astronomía, Universidad Bernardo O’Higgins, Santiago 8370854, Chile
Institute of Solid State Physics, University of Latvia, 8 Kengaraga, 1063 Riga, Latvia
Funding
Ministry of Education and Science of Ukraine · COST Action CA20129 “Multiscale Irradiation and Chemistry Driven Processes and Related Technologies” (MultIChem) · Institute of Solid-State Physics, University of Latvia · European universities, Union Horizon 2020, H2020-WIDESPREAD-01–2016–2017-TeamingPhase2
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