Active Broadband Absorber Based on Phase-Change Materials Optimized via Evolutionary Algorithm
Source abstract
Abstract
This article proposes a temperature-controlled absorber based on VO2, which consists of five layers: a disk-shaped VO2 layer array, a dielectric layer, a circular hole VO2 array, a SiO2 layer, and a gold substrate from top to bottom. We optimized the thickness of the other four layers of the absorber, except for the gold layer, using PSO. After ten iterations, we determined that the optimal parameters for the top-to-bottom four-layer thicknesses were 0.183 μm, 0.452 μm, 0.557 μm and 1.994 μm. At this point, our absorber reached the optimal absorption parameters, and we plotted the absorption spectrum under these conditions. We found that the absorption rate at 29.1–47.2 THz was higher than 90%, and the absorption bandwidth was as high as 18.1 THZ. This frequency band covers most of the atmospheric window area (23–37.5 THz), so it will have good practicality. At 30.8 THz and 43.12 THz, there were perfect absorption peaks with absorption rates of 99.99% and 99.99%, respectively. We explained the cause of absorption from the perspective of electric field, and then we studied the change in the absorption curve of the absorber when the temperature of VO2 changed, and we can directly observe the changes in the electric field to explain this. Finally, we can tune the bandwidth and absorption rate of the absorber by changing the structure of the VO2 pattern. After comparing with other absorbers developed in recent years, our absorber still has good competitiveness, and we believe that our solution is expected to have outstanding performance in fields such as photothermal conversion and thermal stealth in the future.
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Research context
OpenAlex topics: Metamaterials and Metasurfaces Applications · Transition Metal Oxide Nanomaterials · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, China
School of Computing, Queen’s University, Kingston, ON K7L 2N8, Canada
School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, China
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
College of Physics and Electronics, Central South University, Changsha 410083, China
Research Center for Photonic Technology, Fujian Key Laboratory for Advanced Micronano Photonics Technology and Devices & Key Laboratory of Information Functional Material for Fujian Higher Education, Quanzhou Normal University, Quanzhou 362000, China
Joint Laboratory for Extreme Conditions Matter Properties, Tianfu Institute of Research and Innovation, State Key Laboratory of Environmental Friendly Energy Materials, Key Laboratory of Manufacturing Process Testing Technology of Ministry of Education, Southwest University of Science and Technology, Mianyang 621010, China
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
Funding
National Natural Science Foundation of China · Scientific Research Fund of Si Chuan Provincial Science and Technology Department · Open Fund of Hubei Key Laboratory of Mechanical Transmission and Manufacturing Engineering at Wuhan University of Science and Technology · Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences · second batch of industry university cooperation collaborative education project · Southwest University of Science and Technology College Students’ Innovation and Entrepreneurship Training Program Project · Southwest University of Science and Technology College Student Innovation Fund Project · 2022 Scientific Research Project of Huzhou College
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