X-ray Photoelectron Spectroscopy Analysis of Nitrogen-Doped TiO2 Films Prepared by Reactive-Ion-Beam Sputtering with Various NH3/O2 Gas Mixture Ratios
Source abstract
Abstract
Nitrogen-doped TiO2 films were prepared by reactive ion-beam sputtering deposition (IBSD) in a mixed atmosphere of NH3 and O2 at a substrate temperature of 400 °C. X-ray photoelectron spectra revealed the presence of six ions, i.e., N3−, N2−, N1−, N+, N2+, and N3+, respectively, in the films. The amorphous films had complex, randomly oriented chemical bonds. The Tauc–Lorentz model was employed to determine the bandgap energy of the amorphous films prepared using different NH3/O2 gas mixing ratios by ellipsometry. In addition, the optical constants of the films were measured. With the increase in the NH3/O2 gas mixture ratio to 3.0, the bandgap of N-doped TiO2 narrowed to ~2.54 eV.
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Research context
OpenAlex topics: ZnO doping and properties · Electronic and Structural Properties of Oxides · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Fu Jen Catholic University, No.510 Zhongzheng Rd., Xinzhuang Dist., New Taipei City 24205, Taiwan
Graduate Institute of Applied Science and Engineering, Fu Jen Catholic University, No. 510 Zhongzheng Rd., Xinzhuang Dist., New Taipei City 24205, Taiwan
Department of Physics, Bradley University, Peoria, IL 61606, USA
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