DataVXJournal of Porous MaterialsPaper
journal article·2000-01

A Study of Moisture Effects on Ti/Porous Silicon/Silicon Schottky Barrier

V. Strikha, V. Skryshevsky, V. Polishchuk, E. Souteyrand, J.R. Martin

Journal of Porous Materials· Volume 7· Issue 1-3
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Source abstract

Abstract

Results of capacitance-voltage and current-voltage measurements performed on Ti/porous silicon (PS)/p-Si diode structures are presented. A 5–10 increase of conductivity and capacity has been observed at f < 10000 Hz in response to the moisture change from 0 to 50%. Model of Schottky contact on thin PS layer with the charge carriers inside of pores and PS/Si interface is applied to explain the frequency dependence of conductivity/capacity as well as moisture effect.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Silicon Nanostructures and Photoluminescence · Semiconductor materials and interfaces · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (12)

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