article·1984-01-01

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Abstract

High Resolution Photolithography and U‐V Curing of an Experimental Positive Resist (in German) MARTIN, B., Elektronik Produktion & Prüftechnik , No. 11, p. 662 (1983). A photolithographic process using the Deep U‐V Resist Waycoat WX‐159 in conjunction with the developer Waycoat HPR‐402 is described. The process is suitable for conventional U‐V exposure at 320 nm as well as for short‐wave U‐V exposure in the 220–320 nm range. In addition, the extent of resist separation during exposure with HPR‐402 and WX‐108 developers is compared. The stability of the line profile of the WX‐159 resist during the thermal cure process after development could be improved by exposing the developed structures with short‐wave U‐V light.
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OpenAlex topics: Advancements in Photolithography Techniques

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