DataVXChemNanoMatPaper
journal article·2016-01Open access

Back Cover: Resistive Switching Nanodevices Based on Metal–Organic Frameworks (ChemNanoMat 1/2016)

Zhengbang Wang, David Nminibapiel, Pragya Shrestha, Jianxi Liu, Wei Guo, Peter G. Weidler, Helmut Baumgart, Christof Wöll, Engelbert Redel

ChemNanoMat· Volume 2· Issue 1
Publisher pageOpen full text
Source abstract

Abstract

Bipolar switching was demonstrated in crystalline and monolithic SURMOF (surface-anchored metal–organic framework) thin films shown on the Back Cover. By using conductive substrates as bottom and top electrodes, these metal-organic-hybrid materials act as novel nonvolatile RRAM memory devices. The huge flexibility of the SURMOF-RRAM device was further enhanced by loading ferrocene into the free pores of the framework. This result demonstrates a huge potential of SURMOF thin films as scalable active materials for the next-generation of digital processing and organic-based microelectronic devices. More information can be found in the Full Paper by H. Baumgart, C. Wöll, E. Redel, et al. on page 67 in Issue 1, 2016 (DOI: 10.1002/cnma.201500143).
Source: openalex_inverted_index · Quality: baseline

Research context

Nanomaterials

OpenAlex topics: Advanced Nanomaterials in Catalysis · Metal-Organic Frameworks: Synthesis and Applications · Advanced biosensing and bioanalysis techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department Institute of Functional Interfaces Karlsruhe Institute of Technology Hermann-von-Helmholtz-Platz 1, B330 76344 Eggenstein-Leopoldshafen Germany

Semiconductor and Dimensional Metrology Division National Institute of Standard and Technology (NIST) 100 Bureau Drive Gaithersburg Maryland 20899 USA

Dept. Electrical and Computer Engineering Old Dominion University Norfolk Virginia 23529 USA

Applied Research Center, Newport News Thomas Jefferson Natl. Accelerator Lab Virginia 23606 USA

References

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