journal article·2025-10

Nanoscale Electronic Nociceptor using ZnO/TiOx Bilayer Memristor on a Flexible Substrate

Debashis Panda, Arpan Acharya

ChemNanoMat· Volume 11· Issue 10
Publisher page

Abstract

Nociceptive behaviors of binary zinc oxide and titanium oxide sandwiched memristor are observed on a flexible transparent substrate. The ITO/ZnO/TiOx/ITO/PEN device probes threshold behavior by applying beyond 0.9 V pulse amplitude along with an 1 ms pulse width. However, the nociceptor crossed the tolerance by applying a higher pulse width than 1 ms by maintaining the same 0.9 V pulse amplitude. The relaxation properties of the memristor‐based nociceptor are also confirmed by measuring the device after a prolonged time of more than 10 ms prior to the noxious stimulation. The allodynia and hyperalgesia behavior of the nociceptor is validated from the resistance response with different injury voltages. The low‐cost binary oxide sandwiched memristor‐based flexible nociceptor can be the best alternative for humanoid robotic applications.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Photoreceptor and optogenetics research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Engineering Sister Nivedita University Kolkata 700 052 India

Department of Electrical, Electronic, and Information Engineering "Guglielmo Marconi" ‐ DEI University of Bologna 40136 Bologna Italy

Funding

Department of Science and Technology · Board of Research in Nuclear Sciences

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