Bias Selectable Dual Band Detectors Based on Vertically Aligned In2S3‐Coated ZnO Nanorod Arrays Grown on p‐GaN
Source abstract
Abstract
Abstract This study presents the fabrication of ZnO nanotube arrays coated with vertically aligned In2S3, which were deposited onto a p‐GaN substrate using a wet chemical approach. The In2S3/ZnO/p‐GaN heterostructure‐based device showed improved photoresponse and self‐driven operation. The device based on ZnO/p‐GaN structure coupling with In2S3 nanoparticles revealed bias selectable photodetection by detecting UV and UV/visible light through bias voltage modulation. This strategy can benefit the fabrication of ZnO/GaN‐based broadband photodetector.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics and Materials Engineering Dalian Minzu University Dalian 116600 China
Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology Guilin 541004 China
Funding
Fundamental Research Funds for the Central Universities
References (36)
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