journal article·2021-12

Electrochemical Etching of Germanium in Ionic Liquids without the Use of Toxic and Corrosive Reagents

Anna Ya. Kozmenkova, Sofia D. Farafonova, Evgeniya A. Saverina, Alexey S. Galushko, Valentine P. Ananikov, Mikhail P. Egorov, Viatcheslav V. Jouikov, Mikhail A. Syroeshkin

ChemNanoMat· Volume 7· Issue 12
Publisher page

Abstract

Abstract For the first time, the possibility of obtaining porous germanium from both single‐crystal and polycrystalline starting materials using environmentally friendly (in contrast to the commonly used HF and HCl) imidazolium ionic liquids (IL) was shown. It was demonstrated that pore formation depended significantly on the viscosity of the IL, on the etching current density and etching time, and on defects and imperfections of the substrate surface. By varying these parameters, the rates of two competing processes – formation and growth of pores and electropolishing – could be adjusted, consequently allowing germanium with a various structured surface, including a porous surface. In particular, using a more viscous IL (for example, [BMIM][PF6] versus [BMIM][BF4]) made it possible to reduce the rate of dissolution of the germanium dioxide surface layer; as a result, the formation and growth of pores became a dominant process. At the same time, the dissolution rate of the already formed porous layer (electropolishing) increased with the etching current density and the number of defects and imperfections of the germanium surface.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Ionic liquids properties and applications · Extraction and Separation Processes · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

N. D. Zelinsky Institute of Organic Chemistry 119991 Moscow Russia

Dmitry Mendeleev University of Chemical Technology of Russia 125047 Moscow Russia

University of Rennes, UMR CNRS 6226, ISCR Institut des Sciences Chimiques de Rennes) Rennes France

References (37)

Show source-provided references
1. 10.1039/D0MA00807A10.1039/D0MA00807A ↗
2. Ombaba M. · 2015 · 1
3. 10.1039/C2AN15740C10.1039/C2AN15740C ↗
4. Canham L. · 2014 · 110.1007/978-3-319-05744-6 ↗
5. http://www.ebsd.com/hints-tips-for-ebsd-data-collection/ebsd-sample-preparation/electrolyte-polishing-etching(accessed July 25 2021).
6. 10.3390/nano1102055310.3390/nano11020553 ↗
7. 10.1039/C9GC02348H10.1039/C9GC02348H ↗
8. 10.1039/C3CS60353A10.1039/C3CS60353A ↗
9. Quiroga-González E. · 2016 · 29
10. 10.1016/j.jemermed.2007.10.04510.1016/j.jemermed.2007.10.045 ↗
11. 10.1021/acssuschemeng.0c0313310.1021/acssuschemeng.0c03133 ↗
12. Talele G. S. · 2021 · 1
13. 10.1021/acs.chemrev.6b0056210.1021/acs.chemrev.6b00562 ↗
14. 10.1002/pssc.20100013010.1002/pssc.201000130 ↗
15. 10.1016/j.electacta.2015.08.11210.1016/j.electacta.2015.08.112 ↗
16. 10.1016/j.electacta.2021.13793510.1016/j.electacta.2021.137935 ↗
17. 10.1016/j.jelechem.2006.02.02110.1016/j.jelechem.2006.02.021 ↗
18. 10.1016/0040-6090(94)05673-210.1016/0040-6090(94)05673-2 ↗
19. 10.1016/j.apsusc.2019.14485210.1016/j.apsusc.2019.144852 ↗
20. 10.1039/C9CC04408F10.1039/C9CC04408F ↗
21. Datasheets SOLVIONIC SASite SME.www.solvionic.com(accessed October 06 2020).
22. 10.1002/cphc.20090064210.1002/cphc.200900642 ↗
23. 10.1021/je800468h10.1021/je800468h ↗
24. 10.1021/jp073583910.1021/jp0735839 ↗
25. 10.1063/1.188364710.1063/1.1883647 ↗
26. 10.1016/S0065-3055(05)54003-610.1016/S0065-3055(05)54003-6 ↗
27. 10.1021/ja057205y10.1021/ja057205y ↗
28. Kerr J. A. · 2003 · 9
29. 10.1021/acs.inorgchem.0c0135210.1021/acs.inorgchem.0c01352 ↗
30. 10.1007/s11172-011-0399-x10.1007/s11172-011-0399-x ↗
31. 10.1103/PhysRevA.38.309810.1103/PhysRevA.38.3098 ↗
32. 10.1103/PhysRevB.37.78510.1103/PhysRevB.37.785 ↗
33. 10.1063/1.46491310.1063/1.464913 ↗
34. 10.1039/b508541a10.1039/b508541a ↗
35. 10.1063/1.338234410.1063/1.3382344 ↗
36. 10.1002/jcc.2175910.1002/jcc.21759 ↗
37. Gaussian 16 Revision C.01 M. J. Frisch G. W. Trucks H. B. Schlegel G. E. Scuseria M. A. Robb J. R. Cheeseman G. Scalmani V. Barone G. A. Petersson H. Nakatsuji X. Li M. Caricato A. V. Marenich J. Bloino B. G. Janesko R. Gomperts B. Mennucci H. P. Hratchian J. V. Ortiz A. F. Izmaylov J. L. Sonnenberg D. Williams-Young F. Ding F. Lipparini F. Egidi J. Goings B. Peng A. Petrone T. Henderson D. Ranasinghe V. G. Zakrzewski J. Gao N. Rega G. Zheng W. Liang M. Hada M. Ehara K. Toyota R. Fukuda J. Hasegawa M. Ishida T. Nakajima Y. Honda O. Kitao H. Nakai T. Vreven K. Throssell J. A. Montgomery Jr. J. E. Peralta F. Ogliaro M. J. Bearpark J. J. Heyd E. N. Brothers K. N. Kudin V. N. Staroverov T. A. Keith R. Kobayashi J. Normand K. Raghavachari A. P. Rendell J. C. Burant S. S. Iyengar J. Tomasi M. Cossi J. M. Millam M. Klene C. Adamo R. Cammi J. W. Ochterski R. L. Martin K. Morokuma O. Farkas J. B. Foresman D. J. Fox Gaussian Inc. Wallingford CT 2016.