journal article·2022-12

Inducement of an Anisotropic One‐dimensional Surface of Solution‐derived Indium Gallium Oxide Film via Imprint Lithography for Liquid Crystal Alignment

Dong Wook Lee, Eun Mi Kim, Gi Seok Heo, Dong Hyun Kim, Jin Young Oh, Da Bin Yang, Jong In Jang, Hae‐Chang Jeong, Dae‐Shik Seo

ChemNanoMat· Volume 8· Issue 12
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Abstract

Abstract This study uses imprint lithography to produce an anisotropic unidirectional indium gallium oxide (IGO) film for the uniform liquid crystal (LC) alignment layer. The curing temperature was controlled to 110, 180, and 250 °C during the process, and the 250 °C cured film presented a distinct one‐dimensional pattern transferred from the polydimethylsiloxane (PDMS) mold during scanning electron microscopy (SEM). X‐ray photoelectron spectroscopy (XPS) confirmed an active thermal oxidation effect at a high curing temperature, contributing to the formation of a unidirectional structure. This unidirectional IGO structure functioned as a guide for LCs and induced a uniform alignment state, verified by polarized optical microscopy (POM) and a pre‐tilt angle analysis. The IGO film also revealed improved thermal endurance to the LC alignment state and optical transmittance compared with the conventional rubbed polyimide (PI) layer. Given this performance, the one‐dimensional pattern‐imprinted IGO film can be a promising LC alignment layer for an advanced LC system.
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Research context

OpenAlex topics: Liquid Crystal Research Advancements · Advanced Materials and Mechanics · Photonic Crystals and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

IT Nano Electronic Device Laboratory Department of Electrical and Electronic Engineering Yonsei University Seodaemun-gu Seoul 120-749 South Korea

National Center for Nanoprocess and Equipment Korea Institute of Industrial Technology 6 Cheomdangwagi-ro 208beon-gil, Buk-gu Gwangju 500–480 South Korea

Electrical Engineering Changwon National University 20 changwondaehak-ro, Uichang-gu, Changwon Gyeonnam 51140 South Korea

References (27)

Show source-provided references
1. 10.1143/JJAP.48.12020310.1143/JJAP.48.120203 ↗
2. 10.1080/0026897830010034110.1080/00268978300100341 ↗
3. 10.1002/cnma.20170028610.1002/cnma.201700286 ↗
4. 10.1364/OE.45449410.1364/OE.454494 ↗
5. 10.1109/LED.2015.242421610.1109/LED.2015.2424216 ↗
6. 10.1088/1361-6528/aa67ca10.1088/1361-6528/aa67ca ↗
7. 10.1002/jsid.83510.1002/jsid.835 ↗
8. 10.1080/0267829930802782810.1080/02678299308027828 ↗
9. 10.1364/OE.22.00580810.1364/OE.22.005808 ↗
10. 10.1126/science.105986610.1126/science.1059866 ↗
11. 10.1021/acsami.5b0349610.1021/acsami.5b03496 ↗
12. 10.1016/j.apsusc.2015.04.15310.1016/j.apsusc.2015.04.153 ↗
13. 10.1016/j.apsusc.2006.05.05010.1016/j.apsusc.2006.05.050 ↗
14. 10.1038/s41598-018-27887-z10.1038/s41598-018-27887-z ↗
15. 10.1038/374709a010.1038/374709a0 ↗
16. 10.1088/0508-3443/4/S2/31310.1088/0508-3443/4/S2/313 ↗
17. 10.1038/3507517810.1038/35075178 ↗
18. 10.1038/nature0116310.1038/nature01163 ↗
19. 10.1002/1521-4095(200109)13:18<1386::AID-ADMA1386>3.0.CO;2-X10.1002/1521-4095(200109)13:18<1386::AID-ADMA1386>3.0.CO;2-X ↗
20. 10.1109/JDT.2016.258477910.1109/JDT.2016.2584779 ↗
21. 10.1016/j.optmat.2018.07.00810.1016/j.optmat.2018.07.008 ↗
22. 10.1080/1058725940802975110.1080/10587259408029751 ↗
23. 10.1063/1.32392810.1063/1.323928 ↗
24. 10.1002/adma.20120012010.1002/adma.201200120 ↗
25. 10.1016/j.polymer.2018.12.00210.1016/j.polymer.2018.12.002 ↗
26. 10.1002/adfm.20110134510.1002/adfm.201101345 ↗
27. 10.1039/C6RA16833G10.1039/C6RA16833G ↗