journal article·2024-04

Graphene–Encapsulated Si@C with Dual Carbon Layer Structure as High‐Performance Anode Materials for Lithium–Ion Batteries

Shuaibo Zhu, Qian Sun, Cheng Ma, Zijian Yu, Yinxu Zhang, Jitong Wang, Wenming Qiao, Licheng Ling

ChemNanoMat· Volume 10· Issue 4
Publisher page

Abstract

Abstract Silicon–based materials are among the highly promising anode candidates for Li–ion batteries owing to their excellent theoretical energy density. However, the huge volume variation makes the application of silicon anode in lithium–ion batteries be full of challenge. Herein, high–performance Si@C@rGO composites anode for lithium–ion batteries are successfully prepared by graphene oxide (GO) uniformly encapsulating resorcinol–formaldehyde resin (RF) coated silicon nanoparticles. The RF‐derived carbon layer can prevent the silicon from direct contact with the electrolyte. Furthermore, the continuous conductive graphene network not only improves the overall electrical conductivity of the composite material, but also can be reversibly deformed with the volume change of silicon during the charging and discharging process, thus greatly improving the structural stability of the anode. The optimal Si@C@rGO‐2 composite provides a high specific capacity of 743.9 mAh g−−1 after 300 cycles at a current density of 1 A g−1. Meanwhile, the material also exhibits good rate performance, showing a good reversible capacity of 719.5 mAh g−1 even at a high current density of 2 A g−1. In addition, this simple and low‐cost strategy of Si@C@rGO anode can provide a design reference for the further development of anode materials in lithium–ion batteries.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advancements in Battery Materials · Advanced Battery Materials and Technologies · Supercapacitor Materials and Fabrication

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Chemical Engineering East China University of Science and Technology 200237 Shanghai P. R. China

Hesheng Silicon Industry (Shanshan) Co. Ltd, Xinjiang 838200 Xinjiang (P. R. China

Funding

National Natural Science Foundation of China

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