Chemical Vapor Deposition Synthesis of Graphene over Sapphire Substrates
Source abstract
Abstract
Abstract Graphene grown with less grain boundaries, larger grain sizes and transfer‐free feature by chemical vapor deposition (CVD) is of significant importance to fulfill practical applications. Sapphire has readily emerged as an ideal substrate for graphene growth owing to its relatively low cost, good mechanical strength and physical/chemical stability under CVD conditions. In this minireview, recent advance in the CVD preparation of graphene over sapphire substrates is summarized. The graphene growth on epitaxial metal (111) film derived from c‐plane sapphire and direct fabrication over sapphire are respectively discussed. Application sectors of graphene/sapphire hybrid materials are further reviewed. Finally, perspectives on the synthesis of graphene over sapphire are given.
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Research context
OpenAlex topics: Graphene research and applications · Advancements in Battery Materials · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Nanochemistry College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China
Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 P. R. China
Beijing Graphene Institute (BGI) Beijing 100095 P. R. China
College of Energy Soochow Institute for Energy and Materials Innovations Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies Soochow University Suzhou 215006 P. R. China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Beijing Municipality
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