Atomic Layer Deposition of High-Density GeSe Films for Stable Vertical Ovonic Threshold Switching and Selector-Only Memory
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Abstract
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Semiconductor materials and devices · Advanced Memory and Neural Computing
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Affiliations
Department of Materials Science and Engineering and Inter-University Semiconductor Research Center
Seoul National University
SK hynix Inc
Department of Materials Science and Engineering
Hongik University
Funding
National Research Foundation of Korea · SK Hynix
References (69)
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1. 10.1109/TED.2020.296464010.1109/TED.2020.2964640 ↗
2. 10.1109/TED.2017.274634210.1109/TED.2017.2746342 ↗
3. 10.1088/0034-4885/75/7/07650210.1088/0034-4885/75/7/076502 ↗
4. 10.1002/adfm.20130352010.1002/adfm.201303520 ↗
5. Kau, D.; Tang, S.; Karpov, I. V.; Dodge, R.; Klehn, B.; Kalb, J. A.; Strand, J.; Diaz, A.; Leung, N.; Wu, J.; Lee, S.; Langtry, T.; Chang, K.W.; Papagianni, C.; Lee, J.; Hirst, J.; Erra, S.; Flores, E.; Righos, N.; Castro, H.; Spadini, G. In A Stackable Cross Point Phase Change Memory , 2009 IEEE International Electron Devices Meeting (IEDM); IEEE: Baltimore, MD, USA, 2009; pp 1–4.10.1109/IEDM.2009.5424263 ↗
6. 10.1103/PhysRevLett.21.145010.1103/PhysRevLett.21.1450 ↗
7. 10.1557/mrs.2019.20610.1557/mrs.2019.206 ↗
8. 10.1038/s41563-026-02499-510.1038/s41563-026-02499-5 ↗
9. 10.1002/aelm.20240066510.1002/aelm.202400665 ↗
10. 10.1039/D1TC00186H10.1039/D1TC00186H ↗
11. Yoo, S.; Kim, D.; Koo, Y. M.; Jeong, S. K. W.; Shim, H.; Lee, W.J.; Lee, B. S.; Lee, S.; Choi, H.; Lee, H. D.; Kim, T.; Na, M.H. In Structural and Device Considerations for Vertical Cross Point Memory with Single-Stack Memory toward CXL Memory beyond 1x Nm 3DXP , 2022 IEEE International Memory Workshop (IMW); IEEE: Dresden, Germany, 2022; pp 1–4.10.1109/IMW52921.2022.9779247 ↗
12. 10.1039/D4TC05499G10.1039/D4TC05499G ↗
13. 10.1021/acs.chemmater.3c0173510.1021/acs.chemmater.3c01735 ↗
14. 10.1039/D3TC00007A10.1039/D3TC00007A ↗
15. 10.1021/acsaelm.3c0102210.1021/acsaelm.3c01022 ↗
16. 10.1007/s40820-023-01289-x10.1007/s40820-023-01289-x ↗
17. 10.1109/TED.2023.325249110.1109/TED.2023.3252491 ↗
18. 10.1021/acs.chemrev.9b0060010.1021/acs.chemrev.9b00600 ↗
19. 10.1149/2.001310ssl10.1149/2.001310ssl ↗
20. 10.1038/s41598-018-37717-x10.1038/s41598-018-37717-x ↗
21. 10.1007/s00339-019-3073-z10.1007/s00339-019-3073-z ↗
22. 10.1088/1361-6528/aacda010.1088/1361-6528/aacda0 ↗
23. 10.1021/acsami.0c0374710.1021/acsami.0c03747 ↗
24. 10.1016/j.jallcom.2023.17228410.1016/j.jallcom.2023.172284 ↗
25. 10.1016/j.jallcom.2023.16951410.1016/j.jallcom.2023.169514 ↗
26. 10.1016/j.chaos.2024.11519510.1016/j.chaos.2024.115195 ↗
27. 10.1021/acs.nanolett.1c0412510.1021/acs.nanolett.1c04125 ↗
28. 10.1038/s41598-024-73131-210.1038/s41598-024-73131-2 ↗
29. 10.1002/advs.20240802810.1002/advs.202408028 ↗
30. Fantini, P.; Ghetti, A.; Varesi, E.; Pirovano, A.; Baratella, D.; Ribaldone, C.; Campi, D.; Bernasconi, M.; Bez, R. In VT Window Model of the Single-Chalcogenide Xpoint Memory (SXM) , 2024 IEEE International Electron Devices Meeting (IEDM); IEEE: San Francisco, CA, USA, 2024; pp 1–4.10.1109/IEDM50854.2024.10873337 ↗
31. 10.1002/adma.20220466310.1002/adma.202204663 ↗
32. 10.1021/acsami.3c1862510.1021/acsami.3c18625 ↗
33. 10.1039/D1DT03487A10.1039/D1DT03487A ↗
34. 10.1039/C8TC01041B10.1039/C8TC01041B ↗
35. 10.1116/6.000201310.1116/6.0002013 ↗
36. 10.1021/acs.chemmater.9b0253310.1021/acs.chemmater.9b02533 ↗
37. 10.1039/D4DT02946A10.1039/D4DT02946A ↗
38. 10.1039/D0TC04086J10.1039/D0TC04086J ↗
39. 10.1111/jace.1287910.1111/jace.12879 ↗
40. 10.1016/j.jnoncrysol.2015.04.01510.1016/j.jnoncrysol.2015.04.015 ↗
41. 10.1021/acs.jpcb.1c0883610.1021/acs.jpcb.1c08836 ↗
42. 10.1080/1364281000821650410.1080/13642810008216504 ↗
43. 10.1063/5.005586110.1063/5.0055861 ↗
44. 10.1126/sciadv.aay283010.1126/sciadv.aay2830 ↗
45. 10.1016/j.mee.2019.11099610.1016/j.mee.2019.110996 ↗
46. 10.1002/advs.20240403510.1002/advs.202404035 ↗
47. Verdy, A.; Navarro, G.; Bernard, M.; Chevalliez, S.; Castellani, N.; Nolot, E.; Garrione, J.; Noe, P.; Bourgeois, G.; Sousa, V.; Cyrille, M.C.; Nowak, E. In Carbon Electrode for Ge-Se-Sb Based OTS Selector for Ultra Low Leakage Current and Outstanding Endurance , 2018 IEEE International Reliability Physics Symposium (IRPS); IEEE: Burlingame, CA, 2018; pp 6D.4–1–6D.4–6.10.1109/IRPS.2018.8353635 ↗
48. 10.1016/j.apsusc.2024.16148510.1016/j.apsusc.2024.161485 ↗
49. 10.1109/LED.2021.310958210.1109/LED.2021.3109582 ↗
50. Yamaguchi, M.; Degraeve, R.; Garbin, D.; Clima, S.; Ravsher, T.; Matsubayashi, D.; Tsukamoto, T.; Delhougne, R.; Goux, L.; Kar, G. S. In Understanding the Cycling-Dependent Threshold Voltage Instability in OTS Devices , 2022 International Electron Devices Meeting (IEDM); IEEE, 2022; pp 5.1.1–5.1.4.10.1109/IEDM45625.2022.10019444 ↗
51. 10.1016/j.apsusc.2026.16667410.1016/j.apsusc.2026.166674 ↗
52. 10.1063/5.004956810.1063/5.0049568 ↗
53. Chai, Z.; Zhang, W.; Degraeve, R.; Clima, S.; Hatem, F.; Zhang, J. F.; Freitas, P.; Marsland, J.; Fantini, A.; Garbin, D.; Goux, L.; Kar, G. S. In Evidence of Filamentary Switching and Relaxation Mechanisms in GexSe1-x OTS Selectors , 2019 Symposium on VLSI Technology; IEEE: Kyoto, Japan, 2019; pp T238–T239.10.23919/VLSIT.2019.8776566 ↗
54. 10.1063/1.512691310.1063/1.5126913 ↗
55. 10.1038/s41598-024-57029-710.1038/s41598-024-57029-7 ↗
56. Park, I.M.; Lee, K. W.; Park, J.H.; Song, S. J.; Kim, T. Y.; Wu, Z.; Lee, W. J.; Choi, B. D.; Jeong, Y. J.; Oh, S. C.; Park, K.; Kuh, B. J.; Song, Y. J.; Shin, Y. G.; Song, J. H. In Enhanced Endurance Characteristics in High Performance 16nm Selector Only Memory (SOM) , 2023 International Electron Devices Meeting (IEDM); IEEE: San Francisco, CA, USA, 2023; pp 1–4.10.1109/IEDM45741.2023.10413748 ↗
57. 10.1002/pssr.20250047610.1002/pssr.202500476 ↗
58. 10.1002/pssr.20220041710.1002/pssr.202200417 ↗
59. 10.1002/pssr.20230041510.1002/pssr.202300415 ↗
60. Ravsher, T.; Degraeve, R.; Garbin, D.; Clima, S.; Fantini, A.; Donadio, G.; Kundu, S.; Devulder, W.; Hody, H.; Potoms, G.; Van Houdt, J.; Afanas’ev, V.; Belmonte, A.; Kar, G. In Comprehensive Performance and Reliability Assessment of Se-Based Selector-Only Memory , 2024 IEEE International Reliability Physics Symposium (IRPS); IEEE: Grapevine, TX, USA, 2024; pp 7A.5–1–7A.5–9.10.1109/IRPS48228.2024.10529450 ↗
61. Ravsher, T.; Degraeve, R.; Garbin, D.; Fantini, A.; Clima, S.; Donadio, G. L.; Kundu, S.; Hody, H.; Devulder, W.; Van Houdt, J.; Afanas’ev, V.; Delhougne, R.; Kar, G. S. In Polarity-Dependent Threshold Voltage Shift in Ovonic Threshold Switches: Challenges and Opportunities , 2021 IEEE International Electron Devices Meeting (IEDM); IEEE: San Francisco, CA, USA, 2021; pp 28.4.1–28.4.4.10.1109/IEDM19574.2021.9720649 ↗
62. Hu, Z.; Wang, G.; Chai, Z.; Zhang, W.; Garbin, D.; Degraeve, R.; Clima, S.; Ravsher, T.; Fantini, A.; Zhang, J. F.; Belmonte, A.; Kar, G. S. In Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices , 2024 IEEE International Electron Devices Meeting (IEDM); IEEE, 2024; pp 1–4 10.1109/IEDM50854.2024.10873393.10.1109/IEDM50854.2024.10873393 ↗
63. 10.1038/s43246-025-01044-210.1038/s43246-025-01044-2 ↗
64. 10.1016/j.jallcom.2025.18107910.1016/j.jallcom.2025.181079 ↗
65. 10.1016/j.apsusc.2025.16557610.1016/j.apsusc.2025.165576 ↗
66. 10.1109/LED.2025.359897510.1109/LED.2025.3598975 ↗
67. 10.1109/LED.2024.349577810.1109/LED.2024.3495778 ↗
68. 10.1016/j.jmst.2025.06.02310.1016/j.jmst.2025.06.023 ↗
69. 10.1007/s42114-025-01601-w10.1007/s42114-025-01601-w ↗