journal article·2026-03-10Open access

Opportunities and Challenges of Machine Learning in Atomic Layer Deposition

Julia Westermayr, Stacey F. Bent, Ralf Tonner-Zech

Chemistry of Materials· Volume 38· Issue 5

Abstract

High Resolution Image Download MS PowerPoint Slide The integration of machine learning methods is transforming many areas of research by, for instance, accelerating molecular dynamics simulations and enabling the improved prediction and optimization of chemical reactions. However, despite this progress, the adoption of data-driven approaches in atomic layer deposition (ALD) remains limited to a few pioneering studies. In this perspective, we take a first step toward closing this gap and bringing machine learning closer to ALD by introducing the key concepts of relevant algorithms and workflows, surveying the current literature, and outlining challenges and future directions for applying machine learning in ALD. We provide ideas on how the field can proceed to harvest the full potential of machine learning-based approaches for ALD which promises to enable precursor and material design as well as strongly improved computational and experimental approaches for atomic layer processing.
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Research context

OpenAlex topics: Advanced Electron Microscopy Techniques and Applications · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Fakultät für Chemie, Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Linnéstr. 2, 04103 Leipzig, Germany

Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305-4125, United States

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