article·2004-01-01

高圧高温で形成されたγ-Si 3 N 4 及びγ-Ge 3 N 4 窒化物スピネル相のRaman分光法 窒化物スピネル中における欠陥形成の証拠

Emmanuel Soignard, P. F. McMillan

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OpenAlex topics: Military Technology and Strategies · Legal and Regulatory Analysis · Linguistic, Cultural, and Literary Studies

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