journal article·2012-10-04

How the Orientation of Graphene Is Determined during Chemical Vapor Deposition Growth

Xiuyun Zhang, Ziwei Xu, Li Hui, John Xin, Feng Ding

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Abstract

We present a theoretical study on the determination of graphene orientation on the catalyst surface in chemical vapor deposition growth. Our study reveals that the interaction between the graphene wall and catalyst surface is weak and not sensitive to the orientation of graphene. The graphene edge–catalyst interaction is strong and sensitively depends on the graphene orientation. Therefore, the graphene edge–catalyst interaction is responsible for the orientation determination of a small graphene island in the early stage of graphene growth, and such an orientation can be inherited by the matured graphene due to the high barrier of graphene island rotation. On the basis of the mechanism of graphene orientation determination, various controversial-like experimental puzzles have been well-explained, and a potential of synthesizing large-area single-crystalline graphene on either single-crystalline or polycrystalline catalyst surfaces is revealed.
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Research context

OpenAlex topics: Graphene research and applications · Carbon Nanotubes in Composites · Graphene and Nanomaterials Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Textiles and Clothing, Hong Kong Polytechnic University, Hong Kong, China

Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Jinan 250061, People’s Republic of China

References (39)

Show source-provided references
1. Novoselov K. S. · Science · 2004 · 306 · 66610.1126/science.1102896 ↗
2. Geim A. K. · Science · 2009 · 324 · 153010.1126/science.1158877 ↗
3. Wang H. L. · J. Am. Chem. Soc. · 2009 · 131 · 991010.1021/ja904251p ↗
4. Emtsev K. V. · Nat. Mater. · 2009 · 8 · 20310.1038/nmat2382 ↗
5. Ferrari A. C. · Phys. Rev. Lett. · 2006 · 97 · 18740110.1103/PhysRevLett.97.187401 ↗
6. Murata Y. · ACS Nano · 2010 · 4 · 650910.1021/nn102446y ↗
7. Yu Q. · Nat. Mater. · 2011 · 10 · 44310.1038/nmat3010 ↗
8. Marchini S. · Phys. Rev. B · 2007 · 76 · 07542910.1103/PhysRevB.76.075429 ↗
9. Diaye A. T. N. · New J. Phys. · 2008 · 10 · 04303310.1088/1367-2630/10/4/043033 ↗
10. Li X. · J. Am. Chem. Soc. · 2011 · 133 · 281610.1021/ja109793s ↗
11. Cui Y. · Chem. Commun. · 2011 · 47 · 147010.1039/C0CC03617J ↗
12. Yakobson B. I. · ACS Nano · 2011 · 5 · 156910.1021/nn200832y ↗
13. Gao L. · Nano Lett. · 2010 · 10 · 351210.1021/nl1016706 ↗
14. Ogawa Y. · J. Phys. Chem. Lett. · 2012 · 3 · 21910.1021/jz2015555 ↗
15. Kim K. · ACS Nano · 2011 · 5 · 214210.1021/nn1033423 ↗
16. Huang P. Y. · Nature · 2011 · 469 · 38910.1038/nature09718 ↗
17. An J. · ACS Nano · 2011 · 5 · 243310.1021/nn103102a ↗
18. Li X. · Nano Lett. · 2010 · 10 · 432810.1021/nl101629g ↗
19. Vanin M. · Phys. Rev. B · 2010 · 81 · 08140810.1103/PhysRevB.81.081408 ↗
20. Hamada I. · Phys. Rev. B · 2010 · 82 · 08540910.1103/PhysRevB.82.153412 ↗
21. Fuentes-Cabrera M. · Phys. Rev. B · 2008 · 77 · 03540510.1103/PhysRevB.77.035405 ↗
22. Gong C. · J. Appl. Phys. · 2010 · 108 · 12371110.1063/1.3524232 ↗
23. Eom D. · Nano Lett. · 2009 · 9 · 284410.1021/nl900927f ↗
24. Gao J. F. · J. Phys. Chem. C · 2011 · 115 · 1769510.1021/jp2051454 ↗
25. Yuan Q. H. · J. Am. Chem. Soc. · 2012 · 134 · 297010.1021/ja2050875 ↗
26. Ranganathan S. · Acta Crystallogr. · 1966 · 21 · 19710.1107/S0365110X66002615 ↗
27. Trambly de Laissardiere G. · Nano Lett. · 2010 · 10 · 80410.1021/nl902948m ↗
28. Palisaitis J. · 2008
29. Lin Y. · Phys. Rev. B · 2008 · 78 · 04140210.1103/PhysRevB.78.041402 ↗
30. Chenoweth K. · J. Phys. Chem. A · 2008 · 112 · 104010.1021/jp709896w ↗
31. LAMMPS Molecular Dynamics Simulator.http://lammps.sandia.gov/(accessedSeptember 23, 2011).
32. Koma A. · J. Cryst. Growth · 1999 · 201 · 23610.1016/S0022-0248(98)01329-3 ↗
33. Liu T. H. · Carbon · 2011 · 49 · 230610.1016/j.carbon.2011.01.063 ↗
34. Gao J. F. · J. Am. Chem. Soc. · 2011 · 133 · 500910.1021/ja110927p ↗
35. Chen, W.; Chen, H.; Lan, H. P.; Cui, P.; Schulze, T. P.; Zhu, W. G.; Zhang, Z. Y.Suppression of Grain Boundaries in Graphene Growth on Superstructured Mn-Cu(111) Surface. Ar Xiv:1112.2283v1
36. Kresse G. · Phys. Rev. B · 1993 · 48 · 1311510.1103/PhysRevB.48.13115 ↗
37. Kresse G. · Comput. Mater. Sci. · 1996 · 6 · 1510.1016/0927-0256(96)00008-0 ↗
38. Blochl P. E. · Phys. Rev. B · 1994 · 50 · 1795310.1103/PhysRevB.50.17953 ↗
39. Kresse G. · Phys. Rev. B · 1999 · 59 · 175810.1103/PhysRevB.59.1758 ↗