journal article·2015-09-17Open access

Exploring N-Rich Phases in LixNy Clusters for Hydrogen Storage at Nanoscale

Amrita Bhattacharya, Saswata Bhattacharya

Abstract

We have performed cascade genetic algorithm and ab initio atomistic thermodynamics under the framework of first-principles-based hybrid density functional theory to study the (meta-)stability of a wide range of Li(x)N(y) clusters. We found that hybrid xc-functional is essential to address this problem as a local/semilocal functional simply fails even to predict a qualitative prediction. Most importantly, we find that though in bulk lithium nitride, the Li-rich phase, that is, Li3N, is the stable stoichiometry; in small Li(x)N(y) clusters, N-rich phases are more stable at thermodynamic equilibrium. We further show that these N-rich clusters are promising hydrogen storage material because of their easy adsorption and desorption ability at respectively low (≤300 K) and moderately high temperature (≥600 K).
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Hydrogen Storage and Materials · Inorganic Fluorides and Related Compounds · Ammonia Synthesis and Nitrogen Reduction

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany

Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, 110016 New Delhi, India

References (47)

Show source-provided references
1. 10.1016/S1369-7021(03)00922-210.1016/S1369-7021(03)00922-2 ↗
2. 10.1038/3510463410.1038/35104634 ↗
3. 10.1021/jz101537210.1021/jz1015372 ↗
4. 10.1021/cr050184610.1021/cr0501846 ↗
5. 10.1021/cr200274s10.1021/cr200274s ↗
6. 10.1039/b802256a10.1039/b802256a ↗
7. 10.1021/jp802056310.1021/jp8020563 ↗
8. 10.1016/j.ijhydene.2006.11.02210.1016/j.ijhydene.2006.11.022 ↗
9. 10.1016/j.ijhydene.2009.08.08810.1016/j.ijhydene.2009.08.088 ↗
10. 10.1021/jp210315u10.1021/jp210315u ↗
11. 10.1039/c0cp02580a10.1039/c0cp02580a ↗
12. 10.1088/0953-8984/12/30/31010.1088/0953-8984/12/30/310 ↗
13. 10.1021/ja054569h10.1021/ja054569h ↗
14. 10.1021/ja055012510.1021/ja0550125 ↗
15. 10.1021/ja058330c10.1021/ja058330c ↗
16. 10.1021/nl900116q10.1021/nl900116q ↗
17. 10.1021/ja306344b10.1021/ja306344b ↗
18. 10.1021/ja201791y10.1021/ja201791y ↗
19. 10.1021/nn800815e10.1021/nn800815e ↗
20. 10.1038/nmat136810.1038/nmat1368 ↗
21. 10.1021/jp210355n10.1021/jp210355n ↗
22. 10.1021/jp807280w10.1021/jp807280w ↗
23. 10.1021/jp905853x10.1021/jp905853x ↗
24. 10.1021/jp100230c10.1021/jp100230c ↗
25. 10.1002/anie.20046278610.1002/anie.200462786 ↗
26. 10.1002/anie.20046121410.1002/anie.200461214 ↗
27. 10.1021/ja058213h10.1021/ja058213h ↗
28. 10.1038/4624810.1038/46248 ↗
29. 10.1126/science.110207610.1126/science.1102076 ↗
30. 10.1038/nature0345710.1038/nature03457 ↗
31. 10.1021/ja066883x10.1021/ja066883x ↗
32. 10.1021/ja803247y10.1021/ja803247y ↗
33. 10.1021/jp711326g10.1021/jp711326g ↗
34. 10.1038/nature0121010.1038/nature01210 ↗
35. 10.1063/1.277580310.1063/1.2775803 ↗
36. 10.1002/adfm.20100021510.1002/adfm.201000215 ↗
37. 10.1103/PhysRevLett.111.13550110.1103/PhysRevLett.111.135501 ↗
38. 10.1088/1367-2630/16/12/12301610.1088/1367-2630/16/12/123016 ↗
39. 10.1016/j.cpc.2009.06.02210.1016/j.cpc.2009.06.022 ↗
40. 10.1103/PhysRevLett.78.139610.1103/PhysRevLett.78.1396 ↗
41. 10.1103/PhysRevLett.102.07300510.1103/PhysRevLett.102.073005 ↗
42. 10.1063/1.47293310.1063/1.472933 ↗
43. 10.1063/1.220459710.1063/1.2204597 ↗
44. 10.1007/s10853-012-6570-410.1007/s10853-012-6570-4 ↗
45. Scheffler, M.; Weinert, C.InDefects in Semiconductors;Bardeleben, H. J. v., Ed.Trans. Tech. Publ. Ltd.:Switzerland, 1986; pp25–30.
46. Reuter, K.; Stampf, C.; Scheffler, M.InHandbook of Materials Modeling;Yip, S., Ed.Springer:Netherlands, 2005; pp149–194.10.1007/978-1-4020-3286-8_10 ↗
47. 10.1016/j.ijhydene.2011.10.00410.1016/j.ijhydene.2011.10.004 ↗