Enthalpy of Formation for Cu–Zn–Sn–S (CZTS) Calculated from Surface Binding Energies Experimentally Measured by Ion Sputtering
Source abstract
Abstract
Herein, we report an analytical procedure to calculate the enthalpy of formation for thin film multinary compounds from sputtering rates measured during ion bombardment. The method is based on Sigmund’s sputtering theory and the Born–Haber cycle. Using this procedure, an enthalpy of formation for a CZTS film of the composition Cu 1.9 Zn 1.5 Sn 0.8 S 4 was measured as −930 ± 98 kJ mol –1 . This value is much more negative than the sum of the enthalpies of formation for the constituent binary compounds, meaning the multinary formation reaction is predicted to be exothermic. The measured enthalpy of formation was used to estimate the temperature dependence of the Gibb’s free energy of reaction, which appears consistent with many experimental reports in the CZTS processing literature.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Euclid TechLabs, Bolingbrook, Illinois 60440, United States
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States
Department of Energy, Environmental and Chemical Engineering, Washington University, Saint Louis, Missouri 63130, United States
References (19)
Show source-provided references
1. 10.1002/pip.247210.1002/pip.2472 ↗
2. Polizzotti A. · Energy Environ. Sci. · 2013 · 6 · 317110.1039/c3ee41781f ↗
3. Maeda T. · Jpn. J. Appl. Phys. · 2011 · 50 · 04DP0710.1143/JJAP.50.04DP07 ↗
4. Walsh A. · Adv. Energy Mater. · 2012 · 2 · 40010.1002/aenm.201100630 ↗
5. Thimsen E. · Chem. Mater. · 2012 · 24 · 318810.1021/cm3015463 ↗
6. Swaminathan P. · J. Appl. Phys. · 2013 · 113 · 14350910.1063/1.4799628 ↗
7. Johnson M. · Energy Environ. Sci. · 2014 · 7 · 193110.1039/C3EE44130J ↗
8. Thimsen E. · Chem. Mater. · 2013 · 25 · 31310.1021/cm3027225 ↗
9. Betz G. · Top. Appl. Phys. · 1983 · 52 · 1110.1007/3-540-12593-0_2 ↗
10. Sigmund P. · Top. Appl. Phys. · 1981 · 47 · 910.1007/3540105212_7 ↗
11. Matsunami N. · At. Data Nucl. Data Tables · 1984 · 31 · 110.1016/0092-640X(84)90016-0 ↗
12. Comas J. · J. Appl. Phys. · 1967 · 38 · 295610.1063/1.1710031 ↗
13. Scragg J. J. · Chem. Mater. · 2011 · 23 · 462510.1021/cm202379s ↗
14. Jackson A. J. · J. Mater. Chem. A · 2014 · 2 · 782910.1039/C4TA00892H ↗
15. Khare A. · Chem. Commun. · 2011 · 47 · 1172110.1039/c1cc14687d ↗
16. Thimsen E. · ESC Trans. · 2013 · 58 · 95
17. Riha S. C. · J. Am. Chem. Soc. · 2009 · 131 · 1205410.1021/ja9044168 ↗
18. Weber A. · J. Appl. Phys. · 2010 · 107 · 01351610.1063/1.3273495 ↗
19. Redinger A. · J. Am. Chem. Soc. · 2011 · 133 · 332010.1021/ja111713g ↗