Lithographically Patterned p-Type Sb_xTe_y Nanoribbons with Controlled Morphologies and Dimensions

Millimeter-long one-dimensional Sb x Te y nanoribbons with controlled composition and dimensions (down to 16 nm) were demonstrated using lithographically patterned electrodeposition at predetermined locations. The morphology of nanoribbons was tuned by applying a pulse plating technique and addition of surfactant (i.e., CTAB) in the electrolyte. Independent of geometry, the deposit Te content decreased from 69 to 51 at. % Te with an increase in the applied potential. The electrical resistivity and field effect hole mobility were strongly dependent on the composition of the nanoribbon where the lowest electrical resistivity (7.9 × 10 –4 ohm m) with highest hole mobility (24.6 cm 2 /V s) was observed from the Sb 2 Te 3 nanoribbon. The temperature-dependent electrical resistance measurement shows low-temperature phase transition behaviors in the temperatures between 333 and 351 K.