Growth and Electronic Properties of SnSe₂ Films on Reconstructed, (111)-Oriented SrTiO₃ Substrates

Heterointerfaces and heterostructures offer unprecedented potential for tailoring the physical behaviors of two-dimensional materials. In this work, we investigate the growth and electronic properties of SnSe 2 films on the 3 × 3 reconstructed (111)-oriented SrTiO 3 surface using scanning tunneling microscopy/spectroscopy. A distinct coverage-dependent growth mode is identified, which is unambiguously correlated with the spatial distribution of the electronic properties of SnSe 2 films. We further demonstrate that the interfacial modification using a van der Waals-layered material of low work function (1T′-WSe 2 ) between SnSe 2 films and the substrate effectively alters the growth and the electronic structures of SnSe 2 . Our results provide useful insights into the interfacial phenomena that crucially influence the growth and functionalities of SnSe 2 films.