DataVXChemistry of MaterialsPaper
journal article·2022-11-08Open access

Sb2Se3 Thin-Film Growth by Solution Atomic Layer Deposition

Vanessa M. Koch, Jaroslav Charvot, Yuanyuan Cao, Claudia Hartmann, Regan G. Wilks, Ivan Kundrata, Ignacio Mínguez-Bacho, Negar Gheshlaghi, Felix Hoga, Tobias Stubhan, Wiebke Alex, Daniel Pokorný, Ece Topraksal, Ana-Sunčana Smith, Christoph J. Brabec, Marcus Bär, Dirk M. Guldi, Maïssa K. S. Barr, Filip Bureš, Julien Bachmann

Chemistry of Materials· Volume 34· Issue 21
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Source abstract

Abstract

We establish solution atomic layer deposition (sALD) for the controlled growth of pure Sb2Se3 thin films under mild conditions, namely, room temperature and atmospheric pressure. Upscaling this process yields Sb2Se3 thin films with high homogeneity over large-area (4 '') substrates. Annealing of the initially amorphous material leads to highly crystalline and smooth Sb2Se3 thin films. Removing the constraints of thermal stability and sufficient volatility in sALD compared to traditional gas-phase ALD opens up a broad choice of precursors and allows us to examine a wide range of Se2- precursors, of which some exhibit facile synthetic routes and allow us to tune their reactivity for optimal experimental ease of use. Moreover, we demonstrate that the solvent used in sALD represents an additional, attractive tool to influence and tailor the reactivity at the liquid-solid interface between the precursors and the surface.
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Research context

Materials processing

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Phase-change materials and chalcogenides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Chemistry of Thin Film Materials (CTFM), Interdisciplinary Center for Nanostructured Films (IZNF), Friedrich-Alexander Universität Erlangen-Nürnberg (FAU), Cauerstr. 3, Erlangen 91058, Germany

Institute of Organic Chemistry and Technology, Faculty of Chemical Technology, University of Pardubice, Pardubice 53210, Czech Republic

Department Interface Design, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Albert-Einstein-Str. 15, Berlin 12489, Germany

Energy Materials In Situ Laboratory Berlin (EMIL), Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, Berlin 12489, Germany

ATLANT 3D Nanosystems ApS, DTU Science Park, Dimplomvej 372, Kongens Lyngby 2800, Denmark

Automatic Research GmbH, Paniersplatz 13, Nürnberg 90403, Germany

Department of Chemistry and Pharmacy, Interdisciplinary Center for Molecular Materials (ICMM), Friedrich-Alexander University Erlangen-Nürnberg, Erlangen 91058, Germany

PULS Group, Physics Department, Interdisciplinary Center for Nanostructured Films (IZNF), Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, Erlangen 91058, Germany

Group for Computational Life Sciences, Department of Physical Chemistry, Rud̵er Bošković Institute, Zagreb 10000, Croatia

Institute Materials for Electronics and Energy Technology (i-MEET), Friedrich-Alexander Universität Erlangen-Nürnberg (FAU), Martensstraße 7, Erlangen 91058, Germany

Helmholtz-Institute Erlangen-Nürnberg for Renewable Energy (HI-ERN), Albert-Einstein-Str. 15, Berlin 12489, Germany

Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Egerlandstr. 3, Erlangen 91058, Germany

Funding

Deutsche Forschungsgemeinschaft · Friedrich-Alexander-Universit?t Erlangen-N?rnberg

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