Quantum Dot Assembly Driven by Electrochemically Generated Metal-Ion Crosslinkers
Source abstract
Abstract
Control of nanoparticle assembly is a critical enabler for fabricating nanostructures capable of complex, system-level functionality. Here, we report a facile electrochemical method for assembling quantum dots (QDs) into mesoporous gels directly onto an electrode surface using localized, in situ generated metal ion crosslinkers (Ni2+, Co2+, Ag+, or Zn2+) within a colloidal solution of metal chalcogenide nanoparticles capped with ligands featuring pendant carboxylate groups. A mechanistic study reveals a critical stoichiometry of 0.5 metal ions: 1 QD in solution is required to trigger metal ion-mediated electrogelation (ME-gelation), representing a much lower concentration of metal ions than is needed for initiating crosslinking throughout an entire volume of solution (>26 metal ions: 1 QD in solution). The application of the ME gelation approach for the fabrication of QD-based electronic devices is demonstrated by electrochemical patterning of QD gels onto a printed circuit board chip.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry, Wayne State University, Detroit, Michigan 48202, United States
Funding
Division of Chemistry · Wayne State University · Division of Materials Research
References (45)
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