DataVXChemistry of MaterialsPaper
journal article·2023-03-28

Conformal Growth of Hexagonal Boron Nitride on High-Aspect-Ratio Silicon-Based Nanotrenches

Jiye Kim, Kyung-Yeon Doh, Seokho Moon, Chang-Won Choi, Hokyeong Jeong, Jaewon Kim, Wonseok Yoo, Kyungwook Park, Kyeongock Chong, Chunhyng Chung, Hanmei Choi, Si-Young Choi, Donghwa Lee, Jong Kyu Kim

Chemistry of Materials· Volume 35· Issue 6
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Source abstract

Abstract

We successfully accomplished the conformal growth of sp 2 -hybridized few-layer h-BN over an array of Si-based nanotrenches with a 45 nm pitch and an aspect ratio of ∼7:1 by using the pulsed-mode metal–organic chemical vapor deposition (MOCVD) method. Surface-sensitive X-ray absorption fine structure spectroscopy and density functional theory calculations revealed that the B–O bonds formed on the noncatalytic SiO 2 surface act as nucleation sites for the subsequential formation of mixed sp 2 - and sp 3 -hybridized BON 2 and BN 3 at the very initial stage of the pulsed-mode injection of MOCVD precursors, enabling the conformal growth of few-layer sp 2 -hybridized h-BN with an excellent step coverage. We believe that these results can provide a broad avenue for the implementation of fascinating two-dimensional layered materials for current state-of-the-art three-dimensional Si-based nanoscale architectures, overcoming the downscaling limits.
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Research context

NanomaterialsMaterials processing

OpenAlex topics: Graphene research and applications · Diamond and Carbon-based Materials Research · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea

Memory Thin Film Technology Team, Hwaseong Campus, Samsung Electronics Co. LTD, 1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea

Samsung Advanced Institute of Technology (SAIT), 129, Samsung-ro 320 Beon-gil, Yeongtong-gu, Suwon-si, Gyeonggi-do 16706, Republic of Korea

DRAM Process Development, Semiconductor R&D Center, Samsung Electronics Co. LTD, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea

Funding

Samsung · National Research Foundation of Korea · Ministry of Trade, Industry and Energy · Electronics and Telecommunications Research Institute

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