journal article·2022-10-25

Correlating Mg Displacement with Topologically Regulated Lattice Oxygen Redox in Na-Ion Layered Oxide Cathodes

Chong Zhao, Chen Chen, Bei Hu, Wei Tong, Hui Liu, Bingwen Hu, Chao Li

Chemistry of Materials· Volume 34· Issue 20
Publisher page

Abstract

Lattice oxygen redox (LOR) has been explored in transition-metal oxides with a variety of topological structures. However, a clear-cut correlation between topological structures and the behavior of LOR has not yet been definitively established. Here, we discover the close interplay between Mg displacement and the LOR stability during long-term battery operation for two closely related model materials, i.e., P2- and P3-Na2/3Mg1/3Mn(IV)2/3O2 (NMMO). The substantially distinct LOR stability for P2- and P3-NMMO is shown to stem from the different evolution mechanisms between P-type and O-type layers at local scale, accompanied with different degrees of Mg displacement. The theoretical calculations corroborate that out-of-plane Mg displacement is kinetically favorable for desodiated P3-NMMO, which brings about a labile electronic structure and noticeable O2 loss during LOR. By contrast, a stable electronic structure and a limited O2 loss during LOR is revealed for P2-NMMO with confined Mg displacement. This study builds a cornerstone in elucidating the tight correlation between the displacement of “nonredox active” cations and the stability of LOR.
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Research context

OpenAlex topics: Advancements in Battery Materials · Transition Metal Oxide Nanomaterials · Supercapacitor Materials and Fabrication

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shanghai Key Laboratory of Magnetic Resonance, State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, P. R. China

National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China

Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230021, P. R. China

Funding

Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China · Chenguang Program

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