Photoluminescence and Growth Kinetics of High-Quality Indium Arsenide and InAs-Based Core/Shell Colloidal Nanocrystals Synthesized Using Arsine (AsH₃) Generated via Zinc Arsenide as the Arsenic Source

High quality indium arsenide (InAs) and InAs/ZnS, InAs/ZnSe core/shell nanocrystals were synthesized using arsine (AsH 3 ) generated via zinc arsenide (Zn 3 As 2 ) as arsenic precursor. Injection of additional solvent was adopted to control the nucleation. The growth process and different reaction parameters were studied by monitoring the absorption or photoluminescence spectra. The growth of InAs nanocrystals should be controlled in 20−30 min, an extension of growth will lead to dissolution of the NCs due to the instability of the monomer formed from AsH 3 . The Zn 3 As 2 was divided into two parts to extend the duration of size distribution narrowing. Addition of zinc stearate along with indium source not only improved the photoluminescent property without leading to doping of InAs nanocrystals, but also facilitated the one-pot growth of InAs-based core/shell nanocrystals. The photoluminescence quantum yields of InAs/ZnS and InAs/ZnSe core/shell nanocrystals were 8% and 15%, respectively.