Controlled Electrochemical Formation of Ge_xSb_yTe_z using Atomic Layer Deposition (ALD)

This paper describes a systematic study of the deposition of a phase change material, Ge x Sb y Te z, using electrochemical atomic layer deposition (E-ALD). Cyclic voltammetry in aqueous solutions was used to investigate the deposition of atomic layers of Ge, Sb and Te. That data was used to develop initial E-ALD cycle conditions to form the binaries: Sb x Te y and Ge x Te y . Films of the ternary material Ge x Sb y Te z, were then deposited with a wide range of compositions by alternating the binary cycles in various combinations. Conformal nanofilms were formed that exhibited good crystallinity.