journal article·2013-12-23

Silicon-Based Thermoelectrics Made from a Boron-Doped Silicon Dioxide Nanocomposite

Matthew L. Snedaker, Yichi Zhang, Christina S. Birkel, Heng Wang, Tristan Day, Yifeng Shi, Xiulei Ji, Stephan Kraemer, Carolyn E. Mills, Armin Moosazadeh, Martin Moskovits, G. Jeffrey Snyder, Galen D. Stucky

Chemistry of Materials· Volume 25· Issue 24
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Abstract

We report a method for preparing p-type silicon germanium bulk alloys directly from a boron-doped silica germania nanocomposite. This is the first successful attempt to produce and characterize the thermoelectric properties of SiGe-based thermoelectric materials prepared at temperatures below the alloy’s melting point through a magnesiothermic reduction of the silica-germania nanocomposite. We observe a thermoelectric power factor that is competitive with the literature record obtained for high energy ball milled nanocomposites. The large grain size in our hot pressed samples limits the thermoelectric figure of merit to 0.5 at 800 °C for an optimally doped Si 80 Ge 20 alloy.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Semiconductor materials and interfaces · Thermal properties of materials

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Affiliations

Department of Chemistry and Biochemistry, University of California, Santa Barbara, California 93106-9510, United States

Materials Research Laboratory, University of California, Santa Barbara, California 93106-5121, United States

Materials Science, California Institute of Technology, Pasadena, California 91106, United States

College of Materials, Chemistry and Chemical Engineering, Hangzhou Normal University, Hangzhou 310036, P. R. China

Department of Chemistry, Oregon State University, Corvallis, Oregon 97331, United States

Materials Department, University of California, Santa Barbara, California 93106-5050, United States

Funding

National Science Foundation · Alexander von Humboldt Foundation · Basic Energy Sciences, Office of Science, U.S. Department of Energy

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