Source abstract
Abstract
Controlling crystalline phases in polymorphic materials is critical not only for the fundamental understanding of the physics of phase formation but also for the technological application of forbidden, but potentially useful physical properties of the nominally unstable phases. Here, using tin oxide (SnO 2 ) as a model system, we demonstrate a new way to enhance the mechanical hardness of an oxide by stabilizing a high-pressure dense phase through nitrogen integration in the oxide. Pristine SnO 2 has a tetragonal structure at the ambient pressure, and undergoes phase transitions to orthorhombic and cubic phases with increasing pressure. Leveraging the enhanced reactivity of nitrogen in plasma, we are able to synthesize tin oxynitride (SnON) thin films with a cubic phase same as the high-pressure phase of SnO 2 . Such nitrogen-stabilized cubic SnON films exhibit a mechanical hardness of ∼23 ± 4 GPa, significantly higher than even the nitride counterpart (Sn 3 N 4 ) as the result of the shortened atomic distance of the denser, high-pressure cubic phase. Moreover, SnON has a heavily doped, n -type semiconducting property with a controllable optical bandgap. Our work will provide new opportunities to search for and to utilize beneficial, but hidden physical properties that exist in a particular phase stable only at extreme conditions.
Source: openalex_inverted_index · Quality: baseline
Affiliations
Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 02792, Korea
Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 02792, Korea
Department of Nanomaterials Science and Technology, Korea University of Science and Technology, Daejeon 34113, Korea
KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Korea
Funding
Korea Institute of Science and Technology